Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation

为了了解纳米尺度半导体器件中注入掺杂原子的原子行为，研制了一套扫描隧道显微镜系统，用于实时观察离子辐照引起的表面改性。我们已经成功地成像的热处理和钝化硅表面上的离子诱导结构的形成和湮灭过程。基础研究也已进行了实验和使用计算机模拟的电子传导机制，在未来的纳米尺度的三维设备。

A scanning tunneling microscope system has been developed to observe in real-time the surface modification induced by ion irradiation for the purpose of understanding atomistic behaviors of implanted dopant atoms in nano-scale semiconductor devices. We have succeeded in imaging the formation and annihilation processes of ion-induced structures on thermally treated and passivated silicon surfaces. Basic studies have also been performed experimentally and by using computer simulations on electronic conduction mechanisms in future nano-scale three-dimensional devices.