Optical and electrical properties of oxide semiconductors and their applications to ultra-violet sensors

研究了氧化物半导体的光学和电学性质及其在日盲紫外探测器中的应用。利用溶胶-凝胶合成氧化镓薄膜制成的光导体器件作为太阳盲器件，在245 ~ 260nm波长范围内具有较高的灵敏度。我们也学习。Zr1- _xti_xo_2材料的光学带隙可由Zr和Ti的摩尔分数控制。我们展示了。Zr1- _xti_xo_2是一种很有前途的日盲材料，其带隙可以控制在3.6-5.2eV范围内，包括日盲范围。

We studied on the optical and electrical properties of oxide semiconductors and their applications to solar-blind UV detectors. The photoconductor device made of sol-gel synthesized gallium oxide film operated as a solar blind device showing its sensitivity in a wavelength range of 245-260nm. We also studied .Zr1-_xTi_xO_2as a material whose optical band-gap can be controlled by the molar fraction of Zr and Ti. We showed .Zr1-_xTi_xO_2is promising as solar-blind materials showing that their band-gap can be controlled in the range of 3.6-5.2eV, including the solar-blind range.