Accurate measurements of the second-order nonlinear-optical coefficients of SiC

我们已经准确地测量了碳化硅的二阶非线性光学系数，它有望成为下一代大功率变频器件的材料。在1.064μm的基波波长下，对不同厂家、不同多型、不同样品表面取向和不同测量技术的组合进行了测量，得到了相同多型样品的准确值，4H-SiC的D33比6H-SiC的D33小6%。本研究所确定的非线性光学系数的大小可用于高功率、高效率的碳化硅变频器件的精确设计。

We have accurately measured the second-order nonlinear-optical coefficients of SiC, which is expected to be a material for next-generation high-power frequency-conversion devices. We carried out the measurements with several combinations of different manufacturers, polytypes, surface orientations of the samples, and different measurement techniques at the fundamental wavelength of 1.064 μm. The same accurate values were obtained for the same polytype samples, and d33 of 4H-SiC was found to be 6 % smaller than that of 6H-SiC. The magnitudes of the nonlinear-optical coefficients determined in this research should be useful for precise design of high-power and highly efficient frequency-conversion devices using SiC.