High Resolution Mapping of Single Event Transient Current Due to High Energy Heavy Ion

测量了单离子在碳化硅晶体管上感应的暂态电流的MAP。利用数字器件模拟器对暂态电流产生的机理进行了分析。另一方面，开发了新型的测绘系统。利用硫化锌作为荧光粉，在空间分辨率为几十微米的情况下，成功地观测到了暂态电流图。用YAG：Ce和金刚石代替硫化锌，使空间分辨率提高了10倍左右。

The map of transient current induced by a single ion at silicon carbide transistors is measured. The mechanism of transient current is analyzed by using numerical device simulator. On the other hand, the novel mapping system has been developed. By using ZnS as a phosphor, the map of transient current is successfully observed although the spatial resolution is about several tens of micrometers. By using YAG:Ce and Diamond instead of ZnS, the spatial resolution increases about tenfold.