Study of the mechanism of luminescence enhancement in GaN-based semiconductors by water vapor plasma treatment and its application to light emitting devices

在本研究中，我们通过一种材料途径来研究如何提高作为白光发射基础的GaN基半导体的蓝光发射效率，以期将其应用于高效的白光发光二极管。我们已经通过优化各种气体(水蒸气、氢、氧)的等离子体处理条件，获得了10到20倍的蓝光发射增强。我们发现这种增强是由于原子氢的效应，并为开发高效白光发光二极管提供了一个新的技术趋势。本研究结果可能有助于减少碳排放和保护地球生态环境。

In the present study, we have investigated how to enhance the efficiency of blue emission from GaN-based semiconductors, which make the base of white light emission, through an materials approach to aim the application to the highly efficient white-light emitting diodes for lighting. We have attained 10 to 20 times enhancement of blue emission by optimizing the conditions of plasma treatments using various gas species(water vapor, hydrogen, oxygen). We have found that this enhancement is due to the effects of atomic hydrogen, and have presented a new technical trend to develop highly efficient white-light emitting diodes. The present results may contribute to the carbon reduction and preservation of ecological environment of the earth.