Control of Electronic Properties of Materials Using Ultrahigh Electric Field at Electrochemical Interfaces

我们已经开发了双电层晶体管（EDLT）器件，它允许我们的高密度载流子积累超过所有固体场效应晶体管的限制，利用在电化学界面处产生的负电场。我们将这种技术应用于广泛的材料，包括大块晶体，薄膜，和纳米器件制作的剥离方法结合电子束光刻。我们成功地在各种材料中实现了超导性、铁磁性和Mott-Hubbard跃迁的电相位控制，其中我们能够遇到传统全固态场效应晶体管中不可能出现的新现象。我们还发现了EDLT的新功能，如电子控制自旋极化和柔性器件，所有这些都表明EDLT是一种非常强大的技术，以进一步拓宽材料科学。

We have developed electric double layer transistor (EDLT) devices, which allows us a high density carrier accumulation exceeding the limit of all solid field effect transistors, taking the advantage of the ultrahigh electric field generated at the electrochemical interfaces. We applied this technique to a wide range of materials including bulk crystals, thin films, and nanodevices fabricated by an exfoliation method combined with electron beam lithography. We succeeded in electrical phase control of superconductivity, ferromagnetism, and Mott-Hubbard transitions in various materials, among which we were able to encounter novel phenomena which are impossible in conventional all solid field effect transistors. We also found novel functions of EDLTs, such as electrical control of spin polarization and flexible devices, all of which indicates that EDLT is an extremely powerful technique to further broaden materials science.