Probing a charge state of dopant atoms in silicon surfaces

为了研究硅表面单个掺杂（磷）原子的荷电状态，提出了一种在Si（100）表面蒸发磷的新方法，并研究了磷在Si（100）表面的吸附。磷分子成功地从加热到400 ℃的一小块磷化铟晶片上蒸发出来。通过扫描隧道显微镜（STM）观察发现，磷分子在Si（100）表面的吸附存在五种不同的结构。这些物理和电子结构被确定的偏置依赖STM成像和基于密度泛函理论的模拟。此外，通过在500 ℃下加热样品，磷分子成功地掺入到硅表面中。

In order to investigate charging states of individual dopant (phosphorus) atoms in silicon surfaces, a new method to evaporate phosphorus on the Si(100) surface was suggested and phosphorus adsorbed on the surface was studied. Phosphorus molecules were successfully evaporated from a small piece of an indium phosphide wafer heated to 400C. It was found by scanning tunneling microscopy (STM) observations that there are five different structures in adsorption of phosphorus molecules on the Si(100) surface. Those physical and electronic structures were identified by bias-dependent STM imaging and simulations based on density functional theory. Furthermore, phosphorus molecules were successfully incorporated in the silicon surface by heating the sample at 500C.