Designguidelinefor frequencytunable terahertz electromagnetic wave emittersonthe basis of semiconductorphysics

我们在半导体物理学的基础上，研究了频率可调谐太赫兹（THz）发射器。i-GaAs/ n-GaAs结构由于其内建电场由i-GaAs层厚度控制，适合于频率可调谐的THz发射器。此外，我们还发现i-GaAs（d nm）/n-GaAs结构具有频率可调谐性。这些特性由纵向光学声子和等离子体激元之间的耦合模式提供。我们已经考虑到这样的事实，即内置电场的影响占主导地位的太赫兹波的特性。我们发现（11 n）取向的应变多量子威尔斯阱发射出单色的太赫兹波。

We, on thebasisofsemiconductor physics, have investigated frequency tunable terahertz (THz) emitter. i-GaAs/ n-GaAs structures is suitable the frequency tunable THz emitters because their built-in electric field is controlled with the i-GaAs layer thickness. In addition, we have found that in the i-GaAs(d nm)/n-GaAs structure has frequency tenability. These characteristics are provided by the coupling mode between the longitudinal optical phonon and plasmon. We have taken account of the fact that the effect of the built-in electric field dominates the characteristics of the THz wave. We have found that the strained multiple quantum wells with the (11n) orientation emits the monochromatic the THzwave.