Development and Application of Multi-scale Simulation System for the Fabrication of Through Silicon Via

直通硅通孔(TSV)是微电子三维封装中实现堆叠芯片间短连接的一种很有前途的技术，它可以减少信号延迟，从而实现高密度和高速度的性能。TSV技术的关键是在不产生空洞的情况下填充高宽高比的通孔。本文采用动力学蒙特卡罗模拟方法，研究了TSV充填的最佳条件。在铜的电沉积中，包括四种添加剂。通过改变添加剂浓度和电流模式，我们对不同的沉积条件进行了一系列模拟。我们找到了添加剂浓度和电流模式的最佳条件，并对TSV充填机理进行了大量研究。这些结果与实验相吻合，有望对TSV技术做出贡献。

Through silicon via (TSV) is a promising technique to realize short connects among the stacked chips in three dimensional packaging in microelectronics, which would reduce signal delays to allow high-density and high-speed performance. The crucial point in TSV technology is to fill high aspect ratio via holes without creating voids. In this work we studied the optimal conditions for TSV filling by using kinetic Monte Carlo simulation. In copper electrodeposition, four kinds of additives are included. We have performed a series of simulations for various deposition conditions by changing additive concentrations and current patterns. We found optimal conditions of additive concentrations and current patterns, and obtained a lot of results on the mechanism of TSV filling. These results corresponds to experiments and are expected to contribute to TSV technology.