Direct observation of potential distribution around defect structures in semiconductor in the vicinity of metal/semiconductor interface

发展了一种厚度均匀、无损伤的透射电子显微镜样品制备技术。该技术应用于金属/半导体界面，用电子全息术分析了半导体材料中的电势分布。利用带有由压电驱动器控制的电极的瞬变电磁保持架，对界面施加正向偏置和反向偏置。使用夹持器可以测量界面局部区域的I-V曲线。利用电子全息术和电子全息术相结合的方法，可以测量金属/半导体界面附近半导体中的电势分布、耗尽层和电场的变化。

A TEM specimen preparation technique with uniform thickness and damage less has been developed. The technique was applied metal/semiconductor interface to analyze the potential distribution in the semiconductor materials using electron holography. A TEM holder with an electrode controlled by a piezo drive was used to apply forward bias and reversed bias to the interface. I-V carve of local region of the interface could be measured using the holder. Combination technique using the TEM holder and electron holography could measure potential distributions, and the change of depletion layer and the electric field in the semiconductor around the metal/semiconductor interfaces.