High-Speed Vertical-Cavity Laser-Diodes at 1.55µm

本项目的目的是确定和研究带宽限制器件参数，并改进1.55 μ m埋地隧道结（BTJ） VCSELs的器件设计和安装技术，以优化调制带宽。与乌尔姆大学（乌尔姆）、HHI（柏林）、英飞凌（慕尼黑）和中国科学院（北京）半导体研究所合作，建立动态器件模型，执行和分析小信号和数字调制。特别感兴趣的是安装在TO和其他头上的设备，以及激光器内部差分电阻的匹配，在BTJ VCSEL中可能低于50欧姆，以获得最佳速度。

lt is the purpose of this project to identify and investigate the bandwidth-limiting device parameters and to improve the device design and mounting technique of 1.55µm buried tunnel junction (BTJ) VCSELs with respect to optimised modulation bandwidth. In cooperation with the University of Ulm (Ulm), the HHI (Berlin), Infineon (Munich), and the Institute of Semiconductors, the Chinese Academy of Sciences (Beijing) dynamic device models shall be established and small-signals as well as digital modulation shall be performed and analysed. Of particular interest is the device mounting on TO and other headers, and matching of the internal differential resistance of the lasers, that may be quite below 50 ohms in BTJ VCSEL, for optimum speed.