Controlling Defects in 2D Materials for Advanced Optoelectronics

通过控制2D过渡金属硫化物薄膜中的缺陷密度，可以控制范德华异质结构和其他超薄电子器件的制造。这对于控制器件的光电性能是至关重要的，然而，与块状半导体不同，目前还不可能对2D过渡金属硫属化合物中的缺陷和掺杂进行控制。本项目旨在研究单个缺陷的光学性质，以及如何利用灵敏显微镜和受控配体沉积来控制它们。我们将同时研究薄膜晶体管的电学特性和单缺陷显微镜，以关联薄膜器件的光学和电学特性。

Control over defect densities in 2D transition metal chalcogenide films permit controlled fabrication of van der Waals heterostructures and other ultra-thin electronic devices. This is crucial for controlling the optoelectronic properties of devices, yet, unlike bulk semiconductors, defect and dopant control in 2D transition metal chalcogenides is not presently possible. This project aims to investigate the optical properties of single-defects, and how to control them using sensitive microscopy and controlled ligand deposition. Simultaneous electronic characterisation and single-defect microscopy in fabricated thin-film transistors will be investigated to correlate optical and electronic properties of thin-film devices.