ALEGRO: Atomic Layer Deposition and Etching for GaN Power Device Applications

电动汽车和电力输送需要高效的电气开关设备。半导体器件可以做到这一点，但在开关时也会浪费一些能量。该项目计划展示使用氮化镓（GaN）的高压开关器件，氮化镓是仅次于硅的最重要的半导体材料，其新颖的器件格式可以比目前基于化合物半导体与硅结合的混合器件更有效地运行和更快地切换。制造这样的装置需要在蚀刻和沉积层方面达到近乎原子的精度。该项目将进一步开发原子层蚀刻（ALE）和原子层沉积（ALD）工具和工艺，为制造此类设备做好准备。牛津仪器带来了其作为等离子体增强型ALD工艺工具制造商的经验，以及其最近在ALE方面的创新，并将开发这些工具和工艺。格拉斯哥大学将利用其在设备设计和制造方面的专业知识来演示设备制造的工艺流程。

Electric cars and electric power delivery need efficient electrical switching devices. Semiconductor devices can do this, but also waste some energy when switching. This project plans to demonstrate high voltage switching devices using gallium nitride (GaN), the most significant semiconductor material after silicon, in a novel device format which can operate more efficiently and switch faster than the current device hybrids based on compound semiconductors combined with silicon. Making such devices will require almost atomic precision in etching and depositing layers. The project will further develop atomic layer etching (ALE) and atomic layer deposition (ALD) tools and processes ready for the manufacture of such devices. Oxford Instruments brings its experience as a process tool manufacturer for plasma-enhanced ALD, and its recent innovation in ALE, and will develop these tools and processes. The University of Glasgow will use its expertise in device design and manufacture to demonstrate a process flow for device manufacture.