COSMOS (COmplementary Semiconductor using thin-film Metal-Oxide Systems)
COSMOS (COmplementary Semiconductor using thin-film Metal-Oxide Systems)
批准号:
132201
负责人:
金额:
$14.13万
依托单位国家:
英国
项目类别:
Feasibility Studies
财政年份:
2016
资助国家:
英国
项目状态:
已结题
起止时间:
2016 至 --
中文摘要
灵活的电子设备是嵌入式系统提供物联网的关键推动因素,物联网中嵌入的传感器和执行器连接到互联网。既可以感知其环境又可以进行通信的对象,提供了重要的新数据,可用于响应,例如保护对温度敏感的货物、报告故障、通过供应链跟踪货物。物联网的关键推动因素之一是新兴电子产品(灵活、低成本和简单)与传统电子产品(复杂、僵化和昂贵)的融合。为了使柔性集成电路的机会最大化,有必要开发同时使用n型和p型半导体的cmos电路。该项目将研究将p型氧化物材料集成到现有NMOS工艺中以生产CMOS电路的可行性以及制造规模的可行性。项目摘要
英文摘要
Flexible electronics is a key enabler for embedded systems to deliver the Internet-of-Things, where sensors andactuators embedded in physical objects are connected to the Internet. Objects which can both sense theirenvironment and communicate, provide important new data which can be used to respond, e.g. to protecttemperature-sensitive goods, report a fault, track goods through supply-chain. One of the key enabling factorsfor the IoT is the convergence of emerging electronics (flexible, low-cost and simple) with conventionalelectronics (complex, rigid and expensive). In order to maximise the opportunity for flexible ICs, it is necessaryto develop CMOS circuits, which use both n-type and p-type semiconductors. This project will investigate thefeasibility of integrating a p-type oxide material into an existing NMOS process, in order to produce CMOScircuits and the viability of manufacturing scale-up.roject Summary
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
海外基金