Advanced Etching and Optical Coating for Low Cost Laser Diode Manufacturing

该项目的目标是降低化合物半导体激光二极管的制造成本。在光纤到户(FTTH)和数据中心(DC)网络等激光二极管的关键市场中，激光二极管的成本是一个关键因素。化合物半导体技术全球有限公司目前正在为这些市场提供服务，然而，为了保持与全球激光二极管供应商的竞争力，有必要开发能够保持公司竞争力的制造工艺和技术。因此，该项目通过开发化合物半导体的创新使能能力来解决竞争范围，以提高生产率。这将通过开发一种先进的蚀刻和钝化工艺来实现，该工艺将应用于激光二极管晶片，并将允许激光二极管的面在仍处于晶片形式的情况下被涂覆。一个典型的直径3英寸的激光二极管晶片包含超过1000个线棒，因此这种方法的好处是它省去了将晶片切割成线条并将单个线条安装在夹具中以执行介质涂层工艺的劳动密集型方法。该工艺的发展将大大节省激光二极管的制造成本。

The objective of the project is to reduce the cost of manufacturing compound semiconductor laser diodes. In the key markets for laser diodes such as Fibre To The Home (FTTH) and in DataCentre (DC) networks, laser diode cost is a critical factor . Compound Semiconductor Technologies Global Ltd is currently serving these markets however in order to remain competitive against laser diode suppliers globally, it is necessary to develop manufacturing processes and technology that will maintain the company's competitiveness. Project therefore addresses the competition scope by developing an innovative enabling capability in compound semiconductors to improve productivity. This will be achieved through the development of an advanced etch and passivation process that will be applied to the laser diode wafers and will allow the facets of the laser diodes to be coated while still in wafer format. A typical 3 inch diameter laser diode wafer contains over 1000 bars and therefore the benefit of this approach is that it removes the labour intensive approach of cleaving the wafer into bars and mounting the individual bars in jigs to perform the dielectric coating process. The development of the process will lead to substantial savings in the manufacturing cost of laser diodes.