Epitaxial growth of III-V microring lasers for integrated silicon photonics

本项目旨在研究硅衬底上化合物半导体微环激光器的生长和演示，利用选择性区域生长在纳米/微米尺度上设计激光腔的形状。硅光子学是目前光通信和数据通信系统中占主导地位的技术，持续的发展要求更高的速度、更低的功耗和更低的成本。然而，由于激光器和硅衬底之间的材料平台不匹配，芯片上集成的高效率激光器仍然难以实现。该项目将生产可靠、高效和易于制造的集成在硅光子芯片上的激光光源。这也有望为业界更多地开发这项技术铺平道路，进一步降低硅光电子技术的成本，同时提高数据传输速度。

This project aims to investigate the growth and demonstration of compound semiconductor microring lasers on silicon substrates, using selective area growth to engineer the shape of the lasing cavity at the nano/micro-scale. Silicon photonics is currently a dominant technology in optical and data communication systems, and the continued development demands higher speeds, lower power consumption and lower costs. However, on-chip integrated, high efficiency lasers are still elusive due to mismatch in material platforms between the lasers and silicon substrates. This project will produce reliable, efficient and easily manufacturable laser sources integrated on silicon photonic chips. It is also expected to pave the way for more development of this technology by the industry to further drive the cost of silicon photonics technology down whilst increasing data transmission speed.