Swift heavy ion induced nano-porous antimony-based semiconductors

本项目旨在研究高能离子辐照法制备纳米多孔锑基半导体材料及其应用。利用同步加速器和基于实验室的分析技术以及计算机模拟的独特组合，该项目有望确定多孔结构形成的物理机制，并开发应用于热电和热光电池设备的材料。该项目的预期结果包括与当前器件制造方法兼容的制造工艺，这些工艺应该能够将材料快速集成到先进的器件应用中。能源收集和传感器设备等技术的新颖应用应该会带来显著的好处。

This project aims to study the fabrication and application of nano-porous antimony based semiconductors prepared by high-energy ion irradiation. Using a unique combination of synchrotron and laboratory- based analytical techniques as well as computer simulations, the project expects to identify the physical mechanisms for porous structure formation and exploit the materials for application in thermoelectric and thermo-photovoltaic devices. Expected outcomes of the project include fabrication processes compatible with current device fabrication methodologies that should enable rapid integration of the materials into advanced device applications. Significant benefits should result from novel applications of the technologies such as energy harvesting and sensor devices.