GANDALF - GAllium Nitride process De-risk for uk Automotive suppLy chains -- a Feasibility study

这是一个以工业为主导的项目，在该项目中，合作伙伴评估利用现有DER快速启动项目（105891）启动的WBG制造能力在英国制造安派瑞最新一代d模式650V GaN器件的可行性。这个为期5个月的项目将提供200mm工艺定义（外延和晶圆厂），转移规范和任何相关的技术降低风险。根据NDA协议，双方将在以下方面进行技术信息交流：*硅HEMT上650V GaN的外延结构。*关键性能规格和资格要求这项工作是建立可扩展的英国氮化镓材料和芯片制造能力的长期雄心的重要第一阶段，这也将支持安派瑞氮化镓业务的未来增长雄心。成功交付将使安派瑞未来的需求（到2027年每月5000片晶圆）从海外回流到英国（外延和芯片厂），并从150mm晶圆转移到200mm晶圆。提供全面能力所需的其他阶段包括：*第二阶段：制造概念验证，包括关键资本设备的部署*第三阶段：产能提升至1kwpm（包括资本）*第四阶段：产能提升至5kwpm（包括资本）通过加速和降低下一阶段提供200mm GaN on Si， 650V hemt的完整外延和芯片制造能力，还将显着扩大项目范围（105891）。三家工业合作伙伴的互补能力为英国提供了最具成本竞争力的200mm WBG解决方案，该解决方案可以扩展以满足英国汽车供应链不断增长的需求。长期项目的好处包括：*安派瑞可以在CSC的外延产品（目前使用海外供应商）上评估其GaN器件的性能，并启动从150mm到200mm的工艺过渡。* NWF将通过他们的晶圆厂运行安派瑞的测试车，并显著降低后续工艺转移的风险。* CSC将为安派瑞验证其200mm外延晶圆产品，以使其根据安派瑞的预测实现显著增长。*英国汽车供应链获得了最先进的WBG前端能力，即材料、工艺和包装的一站式服务。它还为英国合作伙伴提供了大量商机，否则这些合作伙伴将前往海外。所有合作伙伴都同意该可行性项目可在5个月内管理，并准备在2020年11月1日之前启动。

This is a industrial led project in which the partners assess the feasibility of exploiting the WBG manufacturing capability initiated under an existing DER Fast Start project (105891) to manufacture Nexperia's latest generation of D-mode 650V GaN devices in the UK. This 5 month project will deliver a 200mm process definition (epitaxy and fab), transfer specifications and any relevant technical de-risking. Mutual technical information exchange will be exchanged under NDA on:* The epitaxial structure of the 650V GaN on silicon HEMT.* Process flow requirements of Nexperia's proprietary process* Key performance specifications and qualification requirementsThis work is a vital first phase of a longer term ambition to establish a scalable UK capability in GaN materials and chip manufacturing that will also support the future growth ambitions of Nexperia's GaN business. Successful delivery would enable Nexperia's future demand (5000 wafers per month by 2027) to be reshored to the UK (epitaxy and chip fab) from overseas with the additional benefit of being transferred from 150mm to 200mm wafers. The additional phases needed to deliver the full capability are:* Phase 2: Proof of manufacturing concept including deployment of critical capital equipment* Phase 3: Capacity ramp to 1kwpm - including capital* Phase 4: Capacity ramp to 5kwpm -- including capitalIt will also significantly expand the scope of project (105891) by both accelerating and de-risking the next stages of delivering a full epitaxy and chip manufacturing capability for 200mm GaN on Si, 650V HEMTs.The complementary capabilities of the three industrial partners provide the UK's most credible route for a cost competitive, 200mm WBG solution that can scale to meet the growing demands of the UK automotive supply chain. Longer-term project benefits include:* Nexperia can evaluate it's GaN device performance on CSC's epitaxy offering (currently using overseas suppliers) and initiate the process transition from 150mm to 200mm.* NWF will run Nexperia's test vehicle through their fab and significantly de-risk the subsequent process transfer.* CSC will validate their 200mm epitaxial wafer products for Nexperia to position them for significant growth in line with Nexperia's forecasts.* The UK automotive supply chain gains a state of the art WBG front end capability i.e. a one-stop shop in Materials, Process and Packaging. It also secures a high volume business opportunity for UK partners which would otherwise go overseas.All partners agree this feasibility project is manageable within 5 months and are ready to start by 1st November 2020\.