University of Newcastle - Equipment Account

在过去的十年里，高频微制造设备的数量出现了爆炸式增长。众所周知的例子包括射频微机电系统（RF-MEMS）、用于生物传感的表面声波（SAW）设备、用于数字信号处理（DSP）的SAW设备、用于医学成像的超声波换能器以及用于超声波焊接技术的微机械声电极。由于制造技术和材料的发展，纳米机电（NEMS）变得更加普遍，这种增长将继续下去。例如，石墨烯所提供的独特的电气和机械性能将使器件的谐振频率不断提高。高频器件开发的一个重要部分是测量其动态特性。这包括固有频率、模态、位移场和支撑损失机制。这对于设计优化、优化流程步骤以及验证任何模型或仿真都至关重要。可用于高频系统的测量选项，其中位移可能是几微米的顺序是非常有限的，只有几个选项存在。接触表征技术，如AFM，加载设备，因此阻止其动态的真正准确测量。高频激光振动仪提供了唯一的非侵入性测量选择。我们的目标是购买一个超高频激光测振仪，以实现高频微系统的动态特性。该设备可以测量任何反射率大于4%的结构的位移或速度场，分辨率为皮米，频率为1.2 GHz。因此，它将是表征SAW器件，高频N/MEMS传感器和RF MEMS的理想选择。

The past decade has seen an explosion in the number of high frequency micro-manufactured devices being developed. Well-known examples include RF-Micro-Electro-Mechanical-Systems (RF-MEMS), Surface Acoustic Wave (SAW) devices for applications in biosensing, SAW devices for applications in digital signal processing (DSP), ultrasound transducers for applications in medical imaging and finally micromachined sonotrodes used in ultrasonic welding technology. This growth will continue as Nano-Electro-Mechanical (NEMS) become more prevalent due to developments in fabrication techniques and materials. For example, the unique electrical and mechanical properties offered by graphene will see devices developed with ever increasing resonant frequencies. An essential part in the development of high frequency devices is the measurement of their dynamic behaviour. This includes natural frequencies, modeshapes, displacement fields and support loss mechanisms. This is critical for design optimisation, optimising process steps and validating any model or simulation. The measurement options available for high frequency systems where displacements may be of the order of picometres are extremely limited and only a few options exist. Contacting characterisation techniques e.g. AFM, load the device and therefore prevent a true accurate measurement of its dynamics. High frequency laser vibrometry presents the only non-invasive measurement option. We aim to purchase a ultra-high frequency laser vibrometer to enable dynamic characterisation of high frequency microsystems. This equipment will allow the displacement or velocity field of any structure will greater than 4% reflectivity to be measured with picometre resolution and up to a frequency of 1.2 GHz. It will therefore be ideal for characterising SAW devices, high frequency N/MEMS sensors and RF MEMS.