Silicon Based Qubits Using Quantum Dot Transistors

量子计算机的提出在量子比特设备的开发方面产生了大量的研究。在拟议的研究中，我们研究了在室温下工作的超小，<10 nm的“点接触”量子点晶体管的特性，以定义硅中的量子位。虽然量子位可以在各种不同的系统中实现，但基于硅的量子位具有特定的优势。硅基量子比特已经被证明可以产生相对较长的退相干时间，并且能够与CMOS和纳米技术集成。此外，由于传统的CMOS电路，基于硅的量子位可以与外部世界接口。这种性质使得硅中的量子比特成为量子计算和量子技术的一个有希望的候选者，因为它不仅允许开发纯量子设备，而且还允许开发混合量子经典设备的可能性。此外，作为研究的一部分，我们将模拟各种量子点电路，以更好地了解它们在量子比特形成中的行为和影响。我们还将制造和测量在室温下工作的量子点器件的特性。在制造和设备测量之后，任何有希望的设备将被带到剑桥大学进行进一步的测试和测量量子比特的属性，例如量子比特的去极化时间。与此同时，我们将开发一个理论模型，充分描述量子点晶体管中硅基量子比特的能量学。

The proposal of a quantum computer has generated a great deal of research in the development of qubit devices. In the proposed research, we investigate the characteristics of utra-small, < 10nm 'point contact' quantum dot transistors that operate at room temperature for the definition of qubits in silicon. While qubits can be implemented in a variety of different systems, silicon based qubits possess specific advantages. Silicon based qubits havebeen shown to produce relatively long decoherence times and have the ability to integrate with CMOS and nano-technoogies. In addition, silicon based qubits can interface with the outside world due to conventional CMOS circuitry. This quality makes qubits in silicon a promising candidate for quantum computation and quantum technologies in general as it allows, not only the development of a purely quantum device, but also allows for the possibility of developinghybrid quantum-classical devices. Moreover, as part of the investigation, we will simulate a variety quantum dot circuits to better understand their behaviour and influence in the formation of qubits. We will also fabricate and measure the characteristics of quantum dot devices that operate at room temperature. Following the fabrication and device measurements, any promising devices will be taken to the University of Cambridge for further testing and measurent of qubit properties, such as, qubit dechorence times. In parallel to this, we will develop a theoretical model that fully describes the energetics of silicon based qubits in quantum dot transistors.