IV-VI Semiconductor Nanosheets for Advanced Optoelectronic Applications

二维材料已经彻底改变了材料科学，石墨烯的学术影响是独一无二的。然而，为了生产先进的光电器件，未来的二维材料工业也将需要与导电石墨烯兼容的二维半导体。最近，在曼彻斯特大学，我们对解锁除石墨烯外用于直接打印油墨的有用二维半导体的溶液处理途径产生了兴趣。该项目将探索其中一些材料及其设备应用，我们正在寻找一名雄心勃勃的博士生在这一领域进行前沿研究。我们在层状晶体剥离成二维材料领域具有重要的专业知识(例如Lewis和同事Chem。Commun。化学学报，2016,52,7878-7881。我们最近已经证明，可以通过层状herzenwelte的液相剥落在溶液中产生硫化锡（II）纳米片（SnS）。化学。Soc. 2015, 137, 12689)。我们现在寻求在整个1 - 2ev的能量范围内连续调整带隙的能量。成功的候选人将开发仔细的超声、离心和分离方案，以分离不同厚度的SnS纳米片，从而能够获得特定厚度的“定制”纳米片，从而获得带隙能量。由于一系列IV-VI半导体（SnSe, GeS, GeSe）也是层状结构，这种方法将普遍应用于生产具有可调谐带隙的量子限制纳米片家族，使用自上而下的溶液处理。这将产生一系列有用的半导体纳米片，其带隙跨越光谱范围，可以大量生产用于直接印刷油墨。你的实际工作将得到我们在德国合作者的理论计算的支持

Two-dimensional materials have revolutionised materials science, and the academic impact of graphene is unique. However to produce advanced optoelectronic devices, a future 2D materials industry will also require 2D semiconductors compatible with conducting graphene. Recently at Manchester we have become interested in unlocking solution processing pathways towards useful 2D semiconductors beyond graphene for direct print inks. This project will explore some of these materials and their device applications and we are seeking an ambitious Ph.D. student to undertake cutting edge research in this area. We have significant expertise in the area of exfoliation of layered crystals into 2D materials (e.g. Lewis and co-workers Chem. Commun., 2016, 52, 7878-7881 and Chem. Commun. 50, 13338-13341) and we have recently demonstrated that tin(II) sulfide (SnS) nanosheets can be produced in solution by the liquid phase exfoliation of layered herzenbergite (Lewis & Derby co-workers, J.Am. Chem. Soc. 2015, 137, 12689) . We now seek to tune the energy of the band gap continually across this entire 1 - 2 eV energy range. The successful candidate will develop careful ultrasonication, centrifugation and fractionation protocols for the isolation of SnS nanosheets of various thicknesses, thus enabling access to 'made to order' nanosheets of a certain thickness and thus band gap energy. As a range of IV-VI semiconductors (SnSe, GeS, GeSe), are also layer structures, this approach will be applied in general to produce the family of quantum confined nanosheets with tuneable bandgaps, using top-down solution processing. This will produce a range of useful semiconductor nanosheets with band gaps across the spectral range that can be produced in copious amounts for use as direct-printable inks. Your practical work will be supported by theoretical calculations from our collaborators in Germany