Integration of Silicon Germanium to a Silicon Photonics Platform

SiGe成分的多样性通常以特定应用为目标，并且用于生长化合物材料的大多数方法仅允许在外延工艺步骤内在特定层上实现单一成分。基于液相外延（LPE）或快速熔体生长（RMG）的新颖外延方法提供了在整个晶片上具有多于一种SiGe成分的独特可能性，并且使得可以仅使用一个沉积和一个退火步骤来具有多于一种类型的基于SiGe的器件。本博士计画的目的是利用RMG磊晶法制作光波导整合元件，例如侦测器或调变器。预计RMG工艺将降低缺陷密度，并为集成提供足够的优质材料。因此，SOI上SiGe的RMG方法的工艺开发和集成以及SiGe波导的制造是目前进行的工作的目标。硅光子学目前是光学和电子电路集成的扩展平台。在对更快和更有效的互连的需求不断增长的时代，电子学中硅的大量研究数据促进了互连技术向CMOS兼容光子器件和系统的迁移。硅锗是用于这种高性能电信器件的有前途的材料。由于它的物理特性和制造方法之前使用快速熔体生长（RMG），使晶体成分工程，这是可能的设计与这种材料的尖端设备。SiGe RMG到SOI的集成，形成Si到Ge和SiGe波导过渡的制造过程正在进行中。已经设计了掩模，以便在早期工艺开发测试之后提供使能波导集成工艺。正在开发的新的整合过程是实现这一目标的有效和快速的方法。这份报告是对我在南安普顿大学硅光子学小组做博士研究的过去8个月的项目进展的回顾。

The variety of SiGe compositions commonly target specific applications and most of the methods used to grow compound material only allow to achieve a single composition on a specific layer within an epitaxy process step. A novel epitaxy method based on liquid phase epitaxy (LPE) or rapid melt growth (RMG) gives the unique possibility of more than one SiGe composition across the wafer and makes possible to have more than one type of SiGe based device using just one deposition and one anneal step. The aim of this PhD project is to use the RMG epitaxy method to fabricate waveguide integrated devices such as detector or modulator. It is expected that the RMG process will reduce the defect density and give enough good quality material for the integration. The process development and integration of the RMG method of SiGe on SOI and the fabrication of SiGe waveguides is therefore the target of the currently conducted work.Silicon photonics is currently an expanding platform for the integration of optics and electronic circuits. In a time of increasing demand for faster and more efficient interconnects, the substantial amount of research data available for silicon in electronics facilitates the migration of interconnect technology towards CMOS compatible photonic devices and systemsSilicon germanium is a promising material for such high performance telecommunication devices. Thanks to its physical properties and fabrication methods previously demonstrated using rapid melt growth (RMG) enabling crystal composition engineering, it is possible to design cutting-edge devices with this material.The fabrication process for the integration of the SiGe RMG to SOI to form Si to Ge and SiGe waveguides transition is in progress. Masks have been designed in order to provide enable the waveguide integration process following earlier process development tests. The new integration process being developed is an efficient and fast way to achieve this aim. This report is a review of the project progress throughout the last 8 months of my work as a PhD student at the University of Southampton within Silicon Photonics group.