Simulation of quantum CMOS silicon devices

硅基CMOS（互补金属氧化物半导体）器件是微处理器工业背后的基本驱动力，具有工业规模的小型化制造，它们是一种廉价且可扩展的经典组件，导致了20世纪的技术革命。与经典控制元件集成的低成本、可扩展架构的前景为硅量子硬件提供了一个令人兴奋的资产。该博士学位将重点研究基于硅的CMOS器件建模，该器件将用于检查能带结构，提取必要的参数以完善实验数据和模型，重点是寻找在低温下对此类系统建模的合适方法。创建的模型将用于与量子运动和IMEC（校际微电子中心）合作制造更多的设备。精细化的数据和建模设计将用于进一步实现容错架构的目标，其主要目标是开发具有容错保真度的双量子位门。

Silicon-based CMOS (complimentary metal-oxide-semiconductor) devices are the fundamental driver behind the microprocessor industry, with miniaturised fabrication on an industrial scale, they are a cheap and scalable classical component which led to the technological revolution of the 20$^{th}$ century. The prospect of low-cost, scalable architectures with integration with classical control elements offers an exciting asset that could be leveraged by silicon quantum hardware.This PhD will be a focused study on silicon-based CMOS device modelling which will be used to examine band structure, extract parameters necessary to refine experimental data and models, with an emphasis on finding a suitable way to model such systems at cryogenic temperatures. The models created would then be used to fabricate further devices in collaboration with Quantum Motion and IMEC (Interuniversity Micro-Electronics Center). Refined data and modelled designs will be used to further the goals of achieving fault-tolerant architectures with a primary goal of development of a two-qubit gate with fault tolerant fidelity.