Development of ultrawide bandgap deep UV photodetectors

光电子学是对发光或光探测器件的研究和应用。该项目旨在了解化合物半导体材料氧化镓的物理性质，并为发展最先进的氧化镓光电子学做出贡献。该项目旨在开发基于氧化镓材料的高性价比、高性能的深紫外线(UV)检测技术。为了实现这一目标，这位博士生将与加的夫大学的薄膜种植者、工艺工程师、半导体设备物理学家和工程师合作。这位博士生将进行基本材料表征，并开发新的制造和测试方法，以生产新类别的深紫外光探测器。卡迪夫的研究小组拥有专门的材料表征设备，如光学光谱、电子显微镜和制造设备。该项目将为学生提供广泛的培训和知识，以制造，表征和测试氧化镓为基础的光电材料和设备。

Optoelectronics is the study and application of light-emitting or light-detecting devices. The project aims to understand the physical properties of compound semiconductor material gallium oxide and contribute toward the progress of state-of-the-art gallium oxide optoelectronics. This project aims to develop cost-effective, high-performance deep ultraviolet (UV) detection technologies based on gallium oxide materials. To achieve this, the PhD student will work in partnership with thin-film growers, process engineers, semiconductor device physicists, and engineers at Cardiff University. The PhD student will perform basic materials characterisation and develop novel fabrication and testing methods for producing a new class of deep UV detectors. The research group at Cardiff has a dedicated materials characterisation such as optical spectroscopy, electron microscopy and fabrication facility. The project will provide the student with a wide range of training and knowledge in the fabrication, characterisation and testing of gallium oxide-based optoelectronic materials and devices.