The UK Medium Energy Ion Scattering Facility: Composition and Crystallography of Surfaces and Buried Interfaces
The UK Medium Energy Ion Scattering Facility: Composition and Crystallography of Surfaces and Buried Interfaces
批准号:
EP/E003370/1
负责人:
Timothy Noakes
金额:
$192.96万
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2006
资助国家:
英国
项目状态:
已结题
起止时间:
2006 至 --
中文摘要
该提案寻求资源,以确保英国独特的中能离子散射(MEIS)设施在未来4年内的有效运行。因此,它的目的是利用在沃林顿附近的达雷斯伯里实验室存在的设备(重置价值约300万美元)和专业知识的可观资产。需要资金来提供人力,消耗品和设备,以确保该设施有效运行,并继续为以前未探索的研究领域的新实验创造潜力。MEIS是一种提供成分和结构信息的技术,其深度分辨率接近单个原子层。探测离子从目标中的原子散射,就像弹性台球碰撞一样,将能量损失给反冲的原子。散射离子的能量分析使原子的元素身份得以建立,而由于非弹性电子激发而导致的额外的较小能量损失允许确定表面以下的目标原子的深度。高能量分辨率确保了原子级深度灵敏度。弹性散射也引起了一个原子的“阴影”的另一个上的入射和传出的轨迹,和散射的收益率与散射角的变化提供层特定的结构数据。因此,MEIS提供了关于固体和超薄膜的表面和次表面性质的独特成分和结构信息。达雷斯伯里的MEIS仪器的出色功能,加上其作为用户设施的独特地位,为英国科学家提供了在基础科学和应用科学中研究一系列表面和近表面现象的能力,其中大部分支撑了关键技术领域的多样性:-催化剂,研究设想研究催化剂有效性的作用分离,以及制造能够生产手性纯产品的催化剂的可能性。磁性多层材料,如硬盘驱动器等现代数据存储设备中的磁性多层材料-用于计算机处理器和存储芯片等先进设备的硅处理技术(包括生长、注入和金属化)-建筑、航空航天和汽车应用沿着更专业的产品,如医疗植入物-可用于未来几代电子产品(自旋电子器件和量子点)的新型半导体材料用户计划包括模型系统的基础研究和“现实世界”材料的技术研究。由于该设施是开放给所有学术用户,新的应用领域可以预期在资助期间出现。
英文摘要
This proposal seeks the resources to ensure effective operation of the unique UK Medium Energy Ion Scattering (MEIS) facility for the next 4 years. As such, it aims to exploit the considerable assets both in equipment (replacement value ~ 3M) and expertise that exist at the Daresbury Laboratory near Warrington. Funding is needed to provide manpower, consumables and eqipment to ensure the facility runs efficiently and continues to create the potential for new experiments in research areas not previously explored. MEIS is a technique which provides compositional and structural information with a depth resolution approaching that of a single atomic layer. Probing ions scatter from atoms in the target in elastic billiard ball like collisions losing energy to the recoiling atoms. Energy analysis of the scattered ion enables the elemental identity of the atom to be established, while additional smaller energy losses due to inelastic electronic excitations allow the determination of the depth of the target atom below the surface. High-energy resolution ensures atomic-scale depth sensitivity. The elastic scattering also gives rise to 'shadowing' of one atom by another on the incident and outgoing trajectories, and the resulting variations of scattered yield with scattering angle provide layer-specific structural data. Consequently, MEIS provides unique compositional and structural information on the surface and sub-surface properties of solids and ultra-thin films. The outstanding capabilities of the MEIS instrument at Daresbury, coupled with its unique status as a user facility, offer UK scientists the ability to study a range of surface and near surface phenomena in fundamental and applied science, much of which underpins key technological areas as diverse as:- Catalysts, where research is envisaged to study the role segregation in the effectiveness of bimetallic catalysts and also the possibility of making catalysts capable of producing chirally pure products.- Magnetic multilayer materials like those found in modern data storage devices such as hard disc drives- Silicon processing techniques for advanced devices such as computer processors and memory chips (including growth, implantation and metallisation)- Corrosion protection for architectural, aerospace and automotive applications along with more specialised products such as medical implants - Novel semiconductor materials that could be used in future generations of electronic goods (spintronic devices and quantum dots) The user programme comprises both fundamental studies of model systems and technological studies of 'real-world' materials. Since the facility is open to all academic users, new applications in novel areas can be expected to emerge during the funding period.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
Physical Characterization of the Metal/High-k Layer Interaction upon Annealing
退火时金属/高 k 层相互作用的物理表征
DOI:
10.1149/1.2981624
发表时间:
2008
期刊:
ECS Transactions
影响因子:
--
作者:
[Conard T]
通讯作者:
Conard T
Ion beam analysis for hall scattering factor measurements in antimony implanted bulk and strained silicon
用于锑注入体硅和应变硅中霍尔散射因子测量的离子束分析
DOI:
--
发表时间:
2014
期刊:
Journal of Engineering Research
影响因子:
1
作者:
[Alzanki T.]
通讯作者:
Alzanki T.
The National Centre for Electron Spectroscopy and Surface Analysis
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批准号:EP/E025722/1
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项目类别:Research Grant
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资助金额:$134.51万
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财政年份:2007
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负责人:Timothy Noakes
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依托单位:
海外基金