TeraHertz Planar Gunn Diodes
TeraHertz Planar Gunn Diodes
批准号:
EP/F009259/1
负责人:
G Dunn
金额:
$29.19万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2008
资助国家:
英国
项目状态:
已结题
起止时间:
2008 至 --
中文摘要
THz技术是科学和工程领域一个非常新的和令人兴奋的前沿。从军用和民用的上级高分辨率雷达系统到治疗褥疮、皮肤癌和烧伤的医疗诊断辅助设备、无线办公室通信,甚至考古和天文应用,已经提出了大量的潜在应用。太赫兹辐射已经被媒体称为T射线,在医疗领域的应用尤其令人兴奋,并吸引了众多媒体的关注。本项目提出开发一种新型的平面古恩二极管--THz辐射源。该设备已经实际实现,并提交了专利申请(编号0608515.3)(根据苏格兰企业概念验证奖)。这项拨款提案旨在开发该器件的全部潜力,探索和利用其不寻常的几何形状,使其非常适合集成在MMIC电路中,而不是传统的古恩二极管,增加其功率并将技术发展到英国工业所采用的程度。
英文摘要
THz technology is a very new and exciting frontier in science and engineering. A vast number of potential applications ranging from superior high resolution RADAR systems for both military and civilian use to medical diagnostic aids for treatment of bed sores, skin cancer and burns, wireless office communications and even archaeological and astronomical applications have been proposed. The medical applications are particularly exciting and are attracting much media attention, THz radiation having already been dubbed T-Rays by the press.This project proposes the development of just such a source of THz radiation - a novel form of Planar Gunn diode. This device has already been physically realized and a patent application (No. 0608515.3) filed (under a Scottish Enterprise Proof of Concept award). This grant proposal seeks to develop the full potential of the device, exploring and exploiting its unusual geometry which makes it ideally suited to integration in MMIC circuitry in contrast to conventional Gunn diodes, increasing its power and developing the technology to the point where it will be taken up by British industry.
期刊论文(5)
专著(0)
科研奖励(0)
会议论文
DOI:
10.1063/1.4868705
发表时间:
2014-03
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[A. Khalid;G. Dunn;R. F. Macpherson;S. Thoms;D. Macintyre;Chong Li;M. Steer;V. Papageorgiou;I. Thayne;Martin Kuball;C. Oxley;M. M. Bajo-M.;A. Stephen;J. Glover;D. Cumming]
通讯作者:
A. Khalid;G. Dunn;R. F. Macpherson;S. Thoms;D. Macintyre;Chong Li;M. Steer;V. Papageorgiou;I. Thayne;Martin Kuball;C. Oxley;M. M. Bajo-M.;A. Stephen;J. Glover;D. Cumming
Contact shaping in planar Gunn diodes
平面耿氏二极管中的接触成形
DOI:
10.1002/pssc.201000539
发表时间:
2010
期刊:
physica status solidi c
影响因子:
--
作者:
[Pilgrim N]
通讯作者:
Pilgrim N
IEEE Transactions on Electron Devices
IEEE 电子器件汇刊
DOI:
--
发表时间:
期刊:
NA
影响因子:
--
作者:
[G Dunn (Author)]
通讯作者:
G Dunn (Author)
Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes
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批准号:EP/H012532/1
-
项目类别:Research Grant
-
资助金额:$10.21万
-
财政年份:2010
-
负责人:G Dunn
-
依托单位:
海外基金