Innovative High Resolution Dental X-ray Imager

摘要 辐射监测设备（RMD）建议开发一种新的牙科X射线成像仪， 拥有数字技术的所有优点，保留最理想的图像质量 该薄膜乳剂提供，且最重要是，减少了对患者剂量。该设备将是一个 融合了两种技术-硅基成像阵列和半导体x射线转换 层次。更好地理解硅的能力，以及CCD和CMOS器件 在牙科成像中建立。半导体转换层的应用越来越多， 具有挑战性的方面，但在相关医学领域（如乳房X线摄影）正在取得进展 展示了非凡品质图像的潜力。 RMD希望为牙科成像带来类似的技术革命。的变更 上面提到的技术是用 不同的半导体层-碘化汞（HgI 2）-将提供更大的剂量效率 以及更高的图像对比度。代替a-Si TFT阵列，将采用CMOS无源像素阵列 用于碘化汞转换层。牙科成像的优势在于牙医可以获得 分辨率图像，他们习惯了与电影，但现在与低得多的剂量， 病人 RMD将致力于为高分辨率CMOS定制碘化汞检测层 设备.工作计划将包括粉末制造，评估层的组成， 制备介电层和电极层以与HgI 2层和CMOS结合工作 结构，并完成了广泛的电气和物理测试，以衡量x射线的灵敏度 和图像质量。完成时，希望已证明器械具有特殊的 图像潜在质量优于使用磷光体的传统数字技术， 冰箱。由于采用了关键的直接转换器技术，每幅图像的剂量将大大降低， 降低了目前的标准。

Abstract Radiation Monitoring Devices (RMD) proposes to develop a new dental x-ray imager that will have all the advantages of a digital technology, retain the most desirable aspects of image quality that film emulsions provide, and most importantly, reduce dose to patients. The device will be a blend of two technologies – silicon based imaging arrays and semiconductor x-ray conversion layers. The silicon capabilities are better understood, with CCD and CMOS devices well established in dental imaging. The application of a semiconductor conversion layer is the more challenging aspect, but advances being made in related medical fields (such as mammography) demonstrate the potential for extraordinary quality images. RMD wants to bring a similar technological revolution to dental imaging. The variation to the above referenced technology is to replace the current x-ray receptor (selenium) with a different semiconductor layer – mercuric iodide (HgI2) – that will provide greater dose efficiency and higher image contrast. Instead of a-Si TFT arrays, a CMOS passive pixel array will be adapted for the HgI2 converter layer. The advantage to dental imaging is that dentists will get the high resolution images that they are accustomed to with film, but now with a much lower dose to the patient. RMD will work on tailoring mercuric iodide detection layers to a high resolution CMOS device. The work plan will encompass powder fabrication, evaluating layer compositions, preparing dielectric and electrode layers to work in conjunction with the HgI2 layer and CMOS structure, and completing a wide range of electrical and physical tests to gauge x-ray sensitivity and image quality. At completion, it is desired to have demonstrated a device with exceptional image potential quality that is better than conventional digital technology with phosphors and scintillators. And because of the key direct converter technology, the dose per image will be vastly reduced from current norms.