Fabrication and analyses of intermixing in InGaAs/InGaAsP and InGaAsP/InP quantum welld and their use in intermixed quantum-well lasers and integrated laser-modulator structures

量子阱混合依赖于点缺陷的非平衡浓度的产生，所述点缺陷在热退火处理期间扩散通过量子威尔斯和相邻的势垒层，引起量子阱尺寸和组成的变化。目前，很少有直接的成分研究，探讨量子阱结构内的材料由于混合重新分配。建议使用分析电子显微镜来确定量子阱混合引起的成分和形态变化，以制造具有空间波长特性的InP和GaAs基量子阱结构。观察温度依赖性变化的组成曲线的能力将允许直接测量由于量子阱混合的元素的扩散，并确定该过程的活化能。从退火样品的浓度分布获得的有效扩散系数将导致更好地理解每个特定系统的特定扩散机制（即本征点缺陷平衡和非平衡条件下的替代-间隙和空位机制）。结果将进行比较与理论计算的基础上光致发光的波长偏移，因此，将显着提高我们的知识的扩散和相互扩散机制，发生在半导体材料。

Quantum-well intermixing relies on the creation of non-equilibrium concentrations of point defects that diffuse through the quantum wells and adjacent barrier layers during thermal-anneal treatment, causing changes in the quantum-well dimensions and composition. At present there are few direct compositional studies that look into redistribution of material inside quantum- well structures due to intermixing. It is proposed to use analytical electron microscopy to determine the compositional and morphological changes induced by quantum well intermixing in order to fabricate InP and GaAs-based quantum-well structures with spatial wavelength characteristics. The ability to observe temperature-dependent changes in the compositional profiles will permit the direct measurement of the diffusion of elements due to quantum-well intermixing and to determine the activation energies of the process. The effective diffusion coefficients obtained from the concentration profiles of annealed samples will lead to better understanding of the particular diffusion mechanism for each particular system (i.e. the substitutional-interstitial and the vacancy mechanisms under intrinsic point defect equilibrium and non-equilibrium conditions). Results will be compared with theoretical calculations based on photoluminescent- wavelength shift and, therefore, will significantly improve our knowledge of the diffusion and interdiffusion mechanisms that take place in semiconductor materials.