Quantum-dot semiconductor waveguide gain materials and their applications

1550 nm左右高质量高密度基于inas的自组装量子点（QD）半导体增益材料的技术实现提供了许多新的可能性。与传统的块体/量子阱半导体或掺稀土光纤增益材料相比，基于量子阱的波导增益材料具有以下优点：更宽的光谱带宽，低激光阈值电流密度，高温稳定性，大大降低线宽增强因子，功耗小，饱和输出功率大，高速调制时的低啁啾行为，更好的背反射不灵敏度，独立的多波长和无模式放大。本文的意义在于利用上述特性/优势开发新型量子点半导体波导器件及其应用。

The technological realization of high-quality and high-density InAs-based self-assembled quantum-dot (QD) semiconductor gain material around 1550 nm offers many new possibilities. As compared with the conventional bulk / quantum-well (QW) based semiconductor or rare-earth-doped fiber gain materials, the advantages of the QD-based waveguide gain materials are: much broader spectral bandwidths, low lasing threshold current densities, high temperature stability, strongly reduced linewidth enhancement factor, small power consumption, large saturated output power, low chirp behaviors at high speed modulation, much better back-reflection insensitivity, independent multi-wavelength and pattern-free amplification. The significance of this proposal is that utilizing the above mentioned special properties /advantages to develop novel QD-based semiconductor waveguide devices and their applications.