Development of Nanowire Infrared Photodetectors

申请人正在开发基于来自(In，Ga)(As，P)组的III-V化合物半导体的半导体纳米线。半导体纳米线是直径小到10纳米，长度几微米的棒状结构。纳米线已经成为下一代光伏、传感器和光电探测器的一种很有前途的技术。这项提议将开发基于纳米线的红外光电探测器，具有广泛的军事、生物医学、监视、红外天文和通信应用。与传统的红外光电探测器不同，III-V纳米线可以与传统的硅微电子集成，而不会产生缺陷。在硅成像器阵列上生长的III-V纳米线可以潜在地用作与现有硅技术集成的大面积红外探测器。与现有的探测器技术相比，将III-V化合物集成到现有的硅阵列中具有许多优势，包括更小的像素尺寸、更高的像素密度、更高的产量/更简单的工艺/更低的成本，以及能够利用最新的CMOS成像器技术。

The applicants are developing semiconductor nanowires based on III-V compound semiconductors from the group (In,Ga)(As,P). Semiconductor nanowires are rod-like structures with diameters as small as 10 nm, and lengths of several microns. Nanowires have emerged as a promising technology for next generation photovoltaics, sensors, and photodetectors. This proposal will develop nanowire-based infrared photodetectors having a wide range of military, biomedical, surveillance, infrared astronomy, and communications applications. Unlike conventional infrared photodetectors, III-V nanowires may be integrated with conventional Si microelectronics without generating defects. III-V nanowires grown on a Si imager array can potentially function as a large-area infrared detector that is integrated with established Si technologies. Integrating III-V compounds into established Si arrays has many benefits over existing detector technologies, including smaller pixel size, higher pixel density, higher yield / simpler process / reduced cost, and the ability to take advantage of the most recent advances in CMOS imager technology.