Understanding, characterizing and controlling semiconductor defects

半导体的性质是由杂质和缺陷的存在决定的。缺陷控制载流子浓度、迁移率、寿命和重组，也负责原子传输过程，如杂质和宿主原子的迁移、扩散和沉淀。控制缺陷和杂质是使半导体能够应用于计算和电信或更有效地利用能源的关键因素。我们的研究项目主要集中在新兴半导体的缺陷研究，以及半导体材料和纳米级结构的缺陷，这些缺陷已知会限制半导体技术的进步。对半导体缺陷的理解和控制的研究有助于改进半导体器件在计算、通信和有效利用能源方面的应用。

The properties of semiconductors are determined by the presence of impurities and defects. Defects control carrier concentration, mobility, lifetime, and recombination and are also responsible for processes involving atomic transport such as migration, diffusion, and precipitation of impurities and host atoms. The control of defects and impurities is the critical factor that enables a semiconductor to be engineered for applications in computing and telecommunications or for the more efficient use of energy. Our research program focuses primarily on studies of defects in emerging new semiconductors and on semiconductor materials and nanoscale structures where defects are known to limit the advancement of semiconductor technologies. This research on understanding and controlling semiconductor defects contributes to improved semiconductor devices for applications in computing, communications and the efficient use of energy.