Materials and multilayers/nanowires for spintronics/superconducting applications

这项研究计划重点研究功能电子材料的材料化学和介观物理性质：超薄磁性薄膜和超导纳米桥/纳米线在多层器件中的潜在应用。重点是这些材料的合成及其电学性质的研究。本申请由两部分组成，描述了拟议中的锰基超薄膜隧道结和超导纳米桥-纳米线的研究。 第一部分是磁性氧化锰基材料(锰氧化物)的合成及其超薄膜/多层膜的制备。这项研究的主要目的是：(A)找出这些材料的超薄膜的各向异性磁电性质(如各向异性磁阻(AMR)和反常霍尔电阻率(AHR))与晶格应变之间的关系；(B)合成超薄膜多层隧道结并研究它们的隧道各向异性磁阻(TAMR)，包括它对外加应变的响应。应变调制TAMR结可能在开关或随机存取存储器件中有潜在的应用。 这项建议的第二部分涉及超导纳米桥/纳米线阵列的合成和性能分析，如超导电流和相移事件之间的关系。从基本理解电子在准一维结构中的限制以及在电子/光子探测器/器件中的潜在应用的角度来看，这些研究都是重要的。

This research proposal is focused on the investigation of materials chemistry and mesoscopic physical properties of functional electronic materials: ultra-thin magnetic films and superconducting nanobridges/nanowires for potential applications in multilayer devices. The emphasis is on the synthesis of these materials and studies of their electronic properties. This application consists of two parts that describe the proposed studies of manganite based ultra-thin film tunnel junctions and superconducting nanobridges-nanowires. The first part deals with the synthesis of the magnetic manganese oxide-based materials (manganites) and the ultra-thin films/multilayers of these compounds. The main goals of the proposed research are: (a) to find the correlation between the lattice strain and the anisotropic magneto-electric properties (such as the anisotropic magneto-resistance (AMR) and the anomalous Hall resistivity (AHR)) of ultra-thin films of these materials; (b) to synthesize ultra-thin film multilayer tunnel junctions and investigate their tunneling anisotropic magneto-resistance (TAMR), including its response to the applied strain. The strain-modulated TAMR junctions could have potential applications in switching or random access memory devices. The second part of this proposal deals with the synthesis of superconducting nanobridge/nanowire arrays and the analysis of their properties, such as the relationship between supercurrents and phase slip events. These studies are important from the point of view of the fundamental understanding of the confinement of electrons in quasi-1D structures, as well as from the viewpoint of potential applications in electronic/photonic detectors/devices.