Hybrid III-V optoelectronic devices nano-fabrication: application to concentrated photovoltaics
Hybrid III-V optoelectronic devices nano-fabrication: application to concentrated photovoltaics
批准号:
RGPIN-2016-04969
负责人:
Aimez, Vincent
金额:
$2.99万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2016
资助国家:
加拿大
项目状态:
已结题
起止时间:
2016-01-01 至 2017-12-31
中文摘要
在2016年和未来十年,太阳能电池效率超过50%的潜力很大,以进一步发展人们获得能源的途径,同时减少我们对化石燃料和二氧化碳排放的强烈依赖。
然而,超过50%效率的高浓度CPV的实验室记录与具有成本效益和工业兼容性的真实世界中的同等成就之间存在巨大差异。
通过这项研究计划,我们将紧锣密鼓地为实现50%的电池效率铺平道路,同时开发CPV器件技术,尽可能地从其他工业部门的现有技术砖中获得灵感,如用于3D集成的微电子和先进的低成本封装,以及LED行业的技术诀窍,用于以极低的成本大规模生产GaN基高带隙能量材料。
由于在光电子器件方面拥有20年的经验,包括III-V激光二极管、基于Ge的CPV的III-V和基于GaN的光电子学,作为实验设计的一部分,该计划的创新之处在于开发器件级概念,并从工业化的角度强调最终产品的特性。这将涉及Ge/III-V异质结构与GaN/InGaN器件的混合集成,以及关键的混合集成/封装和热管理开发,从而为该领域此类架构的开发开辟道路,生产最高效的太阳能光伏能源。
舍布鲁克大学独特的纳米制造基础设施和基于CNRS国际联合单位“实验室纳米技术纳米系统(UMI-3463 LN2)”的非常强大的国际合作网络将是该研究计划成功的关键。这也将使我们能够接触到最先进的材料,包括Ge/III-V和GaN/InGaN,这将是本研究计划所必需的。该项目的协作环境融合了研究和工业专业知识的独特组合,并将为以经济高效的方法记录高效率系统开辟道路。利用USherbrooke太阳能测试场,我们还将开发专门用于现场测试的测试车,使用现成的CPV电池技术和混合设备来验证我们的设计。
最后,作为这项研究计划的一部分,未来5年将开发的各种创新当然将使CPV部门受益,但也将影响周围的工业部门,包括LED照明行业和微电子/光电子未来集成电路,这些行业将在未来十年配备大多数高性能计算机,从而为通过该计划培训的高素质人员提供独特的技能,并反过来为加拿大行业提供人才资源。
英文摘要
In 2016 and for the next decade, there is a lot of potential for beyond 50% efficiency solar cells in order to further develop energy access to the people while reducing our strong dependence on fossil fuels and CO2 emissions.
However, there is a vast difference between a laboratory record beyond high concentration CPV at 50% efficiencies and an equivalent achievement in the real word with a cost-effective and industrially compatible process.
With this research program, we will work intensely on paving the road to 50% cell efficiencies while developing CPV device technologies inspired as much as possible from existing technological bricks available in other industrial sectors such as microelectronics for 3D integration and advanced low-cost packaging as well as know-how from the LED industry for very large volume production at very low cost for GaN based high bandgap energy materials.
Thanks to 20 year expertise on optoelectronics devices, both III-V laser diodes, III-V on Germanium based CPV and GaN based optoelectronics, the originality of this program will be to develop device level concepts with a strong emphasis on the final product characteristics from the industrialization point of view as part of the Design of Experiments. This will involve hybrid integration of Germanium/III-V heterostructures with GaN/InGaN devices and key hybrid integration/packaging and thermal management developments to open the way to the development of such architectures in the field, producing the most efficient solar Photovoltaics energy.
Universite de Sherbrooke unique nanofabrication infrastructures and a very strong international collaborative network based on the CNRS international joint unit "Laboratoire Nanotechnologies Nanosystèmes (UMI-3463 LN2)" will be essential for the success of this research program. This will also give us access to state of the art materials both Ge/III-V and GaN/InGaN that will be essential for this research program. The collaborative environment for this project blends a unique mix of excellence in research and industrial expertise and will open the way to record high efficiency systems with a cost-effective approach. Using the USherbrooke solar test site, we will also develop test vehicules dedicated to on-site testing with both off the shelve CPV cell technologies and hybrid devices to validate our designs.
Finally, as part of this research program, the various innovations that will be developed over the next 5 years will of course benefit to the CPV sector but also impact the surrounding industrial sectors including LED lighting industry and microelectronics/optoelectronics future integrated circuits who will equip most high performance computers over the next decade, thus offering unique skillsets to highly qualified personal trained through this program and in turn provide talented resources for the benefit of the Canadian industry.
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III-V optoelectronic devices nanofabrication for next generation concentrated photovoltaics (CPV)
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批准号:RGPIN-2022-04960
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资助金额:$3.35万
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Hybrid III-V optoelectronic devices nano-fabrication: application to concentrated photovoltaics
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Hybrid III-V optoelectronic devices nano-fabrication: application to concentrated photovoltaics
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批准号:RGPIN-2016-04969
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.99万
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Hybrid III-V optoelectronic devices nano-fabrication: application to concentrated photovoltaics
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资助金额:$2.99万
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Hybrid III-V optoelectronic devices nano-fabrication: application to concentrated photovoltaics
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批准号:RGPIN-2016-04969
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.99万
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依托单位:
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批准号:452030-2013
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项目类别:Idea to Innovation
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资助金额:$9.11万
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财政年份:2013
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