III-nitride selective epitaxial nanostructures: From full-color light sources to solid-state single photon sources

在过去的几十年里，半导体物理和工艺方面的科学突破和技术进步几乎对我们生活的方方面面都产生了革命性的影响。第三族氮化物(GaN及其合金)目前处于该领域的前沿，为许多现有的和新兴的应用提供了独特的机会，从固态照明、全色投影显示、增强/虚拟现实到量子应用。基于外延III-氮化物纳米线的器件，包括发光二极管、激光器、微发光二极管和单光子源，近年来因其广泛的重要应用而引起了极大的兴趣。然而，在充分发挥III族氮化物在这类应用中的潜力之前，需要解决几个关键的技术挑战。这项研究计划旨在解决这些挑战，开发在成本和效率方面都将超过现有替代品的III-氮化物设备。这将通过开发在深可见(绿色、琥珀和红色)和紫外光波长下具有高量子效率的无缺陷InGaN和AlGaN量子点纳米线器件来实现。凭借我在设计、外延生长、器件制造和III-氮化物器件表征方面的创新经验和专业知识，该研究计划专注于两个具有重大实际意义的特定领域：全色光源和用于量子应用的单光子光源。全彩色LED照明、显示和增强/虚拟现实应用需要在具有挑战性和/或低效的绿/黄和红光谱区域工作的高功率、自发光纳米级光发射器。我建议通过在几乎无缺陷的InGaN/GaN纳米线异质结构方面的创新，开发出单片集成在单个芯片上的下一代全色红绿蓝(RGB)LED。在接下来的5年里，我将研究InGaN光子晶体纳米线阵列表面发光材料。到目前为止，还没有可靠的单光子源可以在室温和较宽的光谱范围内工作。III-氮化物具有可调的带隙和较大的激子结合能，这对于在数据中心和芯片上通信等热环境中的量子应用是至关重要的。我将开发嵌入在单根纳米线中的位置选择性量子点，光谱范围宽(从紫外线到深可见光)，并在室温以上。拟议中的研究计划将帮助加拿大在这一新兴的纳米光子学和量子研究分支中确立领先地位。该计划将为使用独特的选择性区域外延生长和制造技术实现超高效率照明和单光子发射提供另一条途径。它还将为HQP培训提供一个理想的平台，这些培训将获得设计、生长、纳米制造和表征方面的实践经验。

Scientific breakthroughs and technological progress in semiconductor physics, and processing had a transformative impact in virtually every aspect of our lives over the last few decades. Group III-nitrides (GaN and its alloys) is currently at the frontier of this field and offer unique opportunities for many existing and emerging applications, ranging from solid state lighting, full-color projection display, augmented/virtual reality to quantum applications. Epitaxial III-nitride nanowire-based devices including LEDs, lasers, micro-LEDs, and single photon sources have attracted tremendous interest in the recent years for a broad range of important applications. However, several key technological challenges need to be solved before the full potential of group III-nitrides for such applications can be realized. This research program aims at addressing these challenges and develop III-nitride devices which will surpass the existing alternatives both in cost and efficiency. It will be done by developing defects-free InGaN and AlGaN quantum dot-in-nanowire devices with high quantum efficiency in the deep visible (green, amber and red) and ultraviolet wavelengths. Drawing on my expertise and experience through innovations in design, epitaxial growth, device fabrications and characterizations of III-nitride devices, the research program focuses on two specific areas of great practical significance: full-color light sources, and single photon sources for quantum applications. High power, self-emissive nanoscale light emitters operating in the challenging and/or inefficient green/yellow and red spectral region are required for full-color LED lighting, display, and augmented/virtual reality applications. I propose to develop next generation full-color red, green and blue (RGB) LEDs monolithically integrated on a single chip through innovations in nearly defects-free InGaN/GaN nanowire heterostructures. Over the next 5 years, I will investigate InGaN photonic crystal nanowire array surface-emitting light emitters. To date, there have been no reliable single photon sources which can operate at >room temperature and over a wide spectral range. III-nitrides exhibit tunable energy band gaps and large exciton binding energy which are critical for quantum applications in hot environments such as data center and on-chip communications. I will develop site-selective quantum dot embedded in single nanowire over a wide spectral range (ultraviolet to deep visible) and at above room temperature. The proposed research program will help establish Canada as a leader in this emerging branch of nanophotonics and quantum research. The program will provide an alternative path for achieving ultrahigh efficiency lighting and single photon emission using unique selective area epitaxial growth and fabrication techniques. It will also provide an ideal platform for HQP training who will gain hands-on experience in design, growth, nanofabrication and characterizations.