Epitaxial Growth of AIGaN Using Selective Area Gmwth Technique
使用选择性区域 Gmwth 技术外延生长 AlGaN
基本信息
- 批准号:18560010
- 负责人:
- 金额:$ 2.39万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2006
- 资助国家:日本
- 起止时间:2006 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
It is extremely difficult to grow high-quality, thick A1GaN with a high AIN molar fraction on GaN, because the AIGaN cracks under the large in-plane tensile stress induced. In this study, crack-free high Al-content AIGaN with low dislocation density was grown on (SAG) GaN without coalescence of the wing GaN, which was firstly deposited on an AIN/sapphire template and the structural property of A1GaN was also investigated.SAG-GaN grown on AIN/sapphire template by metal-organic vapor phase epitaxy(MOVPE) was used as a substrate. Crack-free A1GaN with an Al content of 0.51 was successfully fabricated on selective-area-growth (SAG) GaN. lb avoid coalescence of the wing GaN, the growth process of SAG GaN was accurately controlled by in-situ monitoring. TEM measurement demonstrated that the threading dislocations(TDs) were disappeared in SAG GaN layer and appeared in the interface of SAG GaN and AIGaN. Furthermore, TDs in A1GaN layer are mainly pure edge-type dislocation and the TDs density of A1GaN layer was about 1-3×108 cm^<-2>
在GaN上生长高AIN摩尔分数的高质量、厚的A1GaN是极其困难的,因为A1GaN在较大的面内拉伸应力诱导下会产生裂纹。在本研究中,在(SAG) GaN上生长出无裂纹、低位错密度的高al含量A1GaN,而不存在翼状GaN的聚结,并将其沉积在AIN/蓝宝石模板上,并对A1GaN的结构性能进行了研究。采用金属有机气相外延(MOVPE)在AIN/蓝宝石模板上生长sagg - gan作为衬底。在选择性面积生长(SAG) GaN上成功制备了Al含量为0.51的无裂纹A1GaN。为了避免翼状氮化镓的聚结,通过现场监测精确控制了SAG氮化镓的生长过程。透射电镜(TEM)测量结果表明,在SAG GaN层中,螺纹位错(TDs)消失,并出现在SAG GaN与AIGaN的界面上。此外,A1GaN层中的TDs主要是纯边型位错,A1GaN层的TDs密度约为1-3×108 cm^<-2>
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Blue emission from InGaN/GaN hexagonal pyramid structures
InGaN/GaN 六角锥结构的蓝光发射
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:H. Miyake;K. Nakao and K. Hiramatsu
- 通讯作者:K. Nakao and K. Hiramatsu
Structural and optical properties of Si-doped AIGaN/AIN multiple quantum wells grown by MOVPE
MOVPE 生长的硅掺杂 AIGaN/AlN 多量子阱的结构和光学性质
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:D. Li;T. Katsuno;M. Aoki;H. Miyake;K. Hiramatsu;T. Shibata
- 通讯作者:T. Shibata
Optical Characterization of AIGaN grown on incline-grooved AIN epilayer
斜槽 AlN 外延层上生长的 AIGaN 的光学表征
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:H. Miyake;A. Ishiga;N. Umeda;T. Shibata;M. Tanaka;K. Hiramatsu
- 通讯作者:K. Hiramatsu
Blue emission from InGaN/GaN hexagonal pyramid structures" Superlattices and Microstructures
InGaN/GaN 六角锥结构的蓝光发射“超晶格和微结构
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:H. Miyake;K. Nakao;K. Hiramatsu
- 通讯作者:K. Hiramatsu
Influence of growth conditions on Al incorporation to Al_xGa_<1-x>N (x>0.4) grown by MOVPE
生长条件对 MOVPE 生长的 Al_xGa_<1-x>N (x>0.4) 中 Al 掺入的影响
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:D.Li;M.Aoki;T.Katsuno;H.Miyake;K.Hiramatsu;M.Tanaka
- 通讯作者:M.Tanaka
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MIYAKE Hideto其他文献
MIYAKE Hideto的其他文献
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{{ truncateString('MIYAKE Hideto', 18)}}的其他基金
Control of Deep Ultra-violet Emission and Modulation Epitaxy of Nitride Semicondusturs.
氮化物半导体深紫外发射和调制外延的控制。
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24560010 - 财政年份:2012
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High growth-rate hydride-vapor-phase of aluminum nitride
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21560014 - 财政年份:2009
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$ 2.39万 - 项目类别:
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