基于静态随机存储器的大规模集成电路总剂量辐射损伤传递机制研究

大规模集成电路的广泛应用是卫星电子系统向高性能、小型化发展的必然趋势，但其受到了总剂量辐射损伤效应的制约。由晶体管到逻辑门、功能模块直至电路的辐射损伤传递过程机制，是其总剂量辐射效应研究尚未解决的关键问题，也是对其进行抗辐射能力评估和加固的关键所在。本项目以典型大规模电路静态随机存储器为研究对象，开展辐射损伤传递机制研究：设计调用功能模块、覆盖失效模式有异同的功能测试，交叉对比功能测试结果，获得功能模块辐射损伤特性；建立晶体管辐射损伤模型，进一步模拟仿真功能模块内部辐射损伤过程；综合试验、仿真结果，揭示辐射损伤传递机制。本项目的创新点在于以电路宏观参数测试为基础的功能模块辐射损伤测试新方法，与考虑辐照偏置条件影响的辐射损伤电路仿真新途径相结合，解决大规模电路结构复杂导致的内部模块级辐射损伤难以测试分析的问题。本项目的实施可丰富辐射损伤测试表征理论和方法，为电路加固设计和评估提供支撑。

With the trend of high performance and miniaturization of satellite, the use of large scale integrated circuits on electronic system of satellite is inevitable. However, the total dose irradiation damages will limit its application. The damage transmission from transistor to logic gate, functional module and to circuit is not clear until now, which is a key issue in total dose effect research and is crucial to radiation hardness assurance and radiation hardening. In this project, transmission mechanism of total dose irradiation induced damage in large scale integrated circuits is researched based on static random access memory, since static random access memory is basic units of other large scale integrated circuits. By cross-contrasting functional testing covering different functional failure modes and invoking different function modules, we can obtain total dose responses of function modules. By transistor and circuit simulation including radiation, radiation damages in unmeasured nodes can be obtained. Combining the results of test and simulation, we can get the relationship between the transistor parameters degradation and macro damages in functional module and circuits, and reveal the damage transmission mechanism. The innovation of the project is to combine functional module test method with circuit simulation to analyze damage transmission. The results of this project will enrich radiation damage theory and method, and provide scientific basis for radiation hardening and hardness assurance of large scale integrated circuits.