High-voltage SiC power devices for improved energy efficiency.
High-voltage SiC power devices for improved energy efficiency.
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DOI：
10.2183/pjab.98.011
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发表时间：
2022
影响因子：
3.1
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Kimoto, Tsunenobu
关键词：
碳化硅（SiC）功率器件在高击穿电压、低功耗和快速开关方面明显优于现有的硅（Si）器件。本文简要介绍了SiC功率器件的主要特点，然后介绍了SiC pn结击穿现象的研究工作和考虑能带结构的相关讨论。其次，介绍了最重要的单极器件SiC金属氧化物半导体场效应晶体管的最新进展，重点介绍了SiO2/SiC界面沟道迁移率的提高。介绍了极具超高压应用前景的碳化硅双极器件，如引脚二极管和绝缘栅双极晶体管的发展，并论证了其提高载流子寿命的效果。本文还介绍了SiC功率器件大规模生产的现状，以及SiC功率器件对节能的贡献。
Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si) devices in terms of high breakdown voltage, low power loss, and fast switching. This review briefly introduces the major features of SiC power devices and then presents research works on breakdown phenomena in SiC pn junctions and related discussion which takes into account the energy band structure. Next, recent progress in SiC metal-oxide-semiconductor field effect transistors, which are the most important unipolar devices, is described with an emphasis on the improvement of channel mobility at the SiO2/SiC interface. The development of SiC bipolar devices such as pin diodes and insulated gate bipolar transistors, which are promising for ultrahigh-voltage (>10 kV) applications, are introduced and the effect of carrier lifetime enhancement is demonstrated. The current status of mass production and how SiC power devices can contribute to energy saving are also described.
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