New Opportunities for High-Performance Source-Gated Transistors Using Unconventional Materials.
New Opportunities for High-Performance Source-Gated Transistors Using Unconventional Materials.
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DOI：
10.1002/advs.202101473
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发表时间：
2021-10
期刊：
影响因子：
--
通讯作者：
Marks TJ
中科院分区：
文献类型：
--
作者：
Wang G;Zhuang X;Huang W;Yu J;Zhang H;Facchetti A;Marks TJ
源极栅控晶体管（SGT）通常通过在交错薄膜晶体管（TFT）中引入源极势垒来实现，相对于传统TFT表现出许多优点，包括低增益、低功耗、更高的偏置应力稳定性、对短沟道效应的免疫力以及对几何变化的更大容限。这些特性使SGT成为易于制造的显示器、生物医学传感器和物联网可穿戴电子产品的有希望的候选者，其中低功耗、高性能和高效、低成本的可制造性是必不可少的。本文首先讨论了SGT的结构、制造和工作机制的一般方面，然后与传统TFT进行了详细的性能比较。接下来，首先讨论了基于硅的高性能SGT的进展，然后是新兴金属氧化物，有机半导体和2D材料的最新进展，分别讨论，然后是SGT及其电路可以独特实现的有前途的应用。最后，本文总结了挑战和展望。独特的器件架构和本质上不同的操作机制使源极栅控晶体管（SGT）能够实现更高的增益、更低的功耗、更低的饱和电压、更高的偏置应力稳定性、抗短沟道效应以及更大的几何变化容限。这些特性使SGT成为易于制造的显示器、生物医学传感器、集成模拟和数字电路以及可穿戴电子产品的理想候选者。
Source‐gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short‐channel effects, and greater tolerance to geometric variations. These properties make SGTs promising candidates for readily fabricated displays, biomedical sensors, and wearable electronics for the Internet of Things, where low power dissipation, high performance, and efficient, low‐cost manufacturability are essential. In this review, the general aspects of SGT structure, fabrication, and operation mechanisms are first discussed, followed by a detailed property comparison with conventional TFTs. Next, advances in high‐performance SGTs based on silicon are first discussed, followed by recent advances in emerging metal oxides, organic semiconductors, and 2D materials, which are individually discussed, followed by promising applications that can be uniquely realized by SGTs and their circuitry. Lastly, this review concludes with challenges and outlook overview. The unique device architecture and intrinsically different operating mechanism enable source‐gated transistors (SGTs) to achieve ultrahigh gain, lower power consumption, lower saturation voltage, higher bias stress stability, immunity to short‐channel effects, and greater tolerance to geometric variations. These characteristics make SGTs ideal candidates for readily fabricated displays, biomedical sensors, integrated analog and digital circuits, and wearable electronics.
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