Direct growth of freestanding GaN on C-face SiC by HVPE.
Direct growth of freestanding GaN on C-face SiC by HVPE.
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通过 HVPE 在 C 面 SiC 上直接生长独立式 GaN
DOI：
10.1038/srep10748
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发表时间：
2015-06-02
影响因子：
4.6
通讯作者：
Huo Q
中科院分区：
文献类型：
--
作者：
Tian Y;Shao Y;Wu Y;Hao X;Zhang L;Dai Y;Huo Q
本文采用HVPE法，采用两步生长工艺，在C面6 H-SiC上成功生长出了高质量的GaN晶体。由于GaN和SiC衬底之间的相互作用应力很小，即使厚度很小，也能从SiC衬底上自分离。此外，SiC衬底在整个过程后没有损坏，因此可以重复使用在GaN生长中。采用热磷酸蚀刻（在240 °C下持续30分钟）来识别GaN层的极性。根据蚀刻结果，所获得的层是Ga极性GaN。高分辨X射线衍射（HRXRD）和电子背散射衍射（EBSD）进行了表征的自支撑GaN的质量。拉曼测试表明，在C面6 H-SiC上生长的GaN自支撑薄膜无应力。光致发光（PL）光谱的独立的GaN层的光学特性进行了测定。
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.
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影响因子：
3.1
作者：
Shao, Yongliang;Dai, Yuanbin;Tian, Yuan
通讯作者：
Tian, Yuan
影响因子：
3
作者：
Choi, YS;Park, JH;Lee, BT
通讯作者：
Lee, BT
DOI：
10.1143/jjap.37.4460
发表时间：
1998-08-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
影响因子：
--
作者：
Fini, P;Wu, X;Speck, JS
通讯作者：
Speck, JS
GaN基发光二极管的最新进展
影响因子：
29.4
作者：
Jia, Haiqiang;Guo, Liwei;Chen, Hong
通讯作者：
Chen, Hong
影响因子：
3
作者：
Kim, HM;Oh, JE;Kang, TW
通讯作者：
Kang, TW