Top-gated chemical vapor deposition grown graphene transistors with current saturation.
Top-gated chemical vapor deposition grown graphene transistors with current saturation.
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DOI：
10.1021/nl201331x
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发表时间：
2011-06-08
期刊：
影响因子：
10.8
通讯作者：
Duan X
中科院分区：
文献类型：
--
作者：
Bai J;Liao L;Zhou H;Cheng R;Liu L;Huang Y;Duan X
石墨烯晶体管在射频（RF）应用中具有相当大的兴趣。一般来说，具有大跨导和漏极电流饱和的晶体管对于射频性能是理想的，然而在石墨烯晶体管中实现这一点并不容易。在这里，我们报道了基于化学气相沉积（CVD）生长的具有大跨导和漏极电流饱和的石墨烯的高性能顶门控石墨烯晶体管。采用蒸发高介电常数材料（HfO2）作为顶栅介质制备石墨烯晶体管。对沟道长度从5.6µm到100 nm的晶体管的长度缩放研究表明，在5.6µm器件中可以实现完全的电流饱和，并且随着沟道长度缩小到100 - 300 nm范围，饱和特性会下降。漏极电流饱和主要是由于漏极偏置引起的狄拉克点位移。通过选择性沉积HfO2栅极介质，我们进一步展示了一种简单的方案，可以实现300 nm通道长度的石墨烯晶体管，具有自校准源极-漏极，从而实现迄今为止CVD石墨烯中最高的250µS/µm的跨导。
Graphene transistors are of considerable interest for radio frequency (RF) applications. In general, transistors with large transconductance and drain current saturation is desirable for RF performance, which is however nontrivial to achieve in graphene transistors. Here we report high performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO2) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 µm to 100 nm shows that complete current saturation can be achieved in 5.6 µm devices and the saturation characteristics degrade as the channel length shrinks down to 100–300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO2 gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 µS/µm reported in CVD graphene to date.
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