Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance
Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance
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利用电荷平衡优化半超结沟槽 MOSFET 的比导通电阻
DOI：
10.1109/ted.2013.2242331
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发表时间：
2013-02
影响因子：
3.1
通讯作者：
Chen Xingbi
中科院分区：
文献类型：
--
作者：
Huang Haimeng;Chen Xingbi
基于电荷叠加法，推导了叉指平衡对称半超结（SemiSJ）结构二维电场分布的解析模型。垂直电场的精确解析解的精确近似也被提出，并通过器件模拟证明。提出了半导体结型沟槽MOSFET定深比导通电阻的优化方法及其数值计算结果，并通过仿真验证了优化方法的有效性。计算结果表明，当AR = 3时，优化后的SemiSJ沟槽MOSFET比导通电阻比超结沟槽MOSFET降低了12%以上。电荷不平衡对击穿电压（BV）的影响也进行了研究。结果表明，最大BV值出现在高Qp条件下，而不是电荷平衡条件下。
Analytical models of the 2-D electric field distributions of the interdigitated balanced symmetric semisuperjunction (SemiSJ) structure, based on the charge superposition method, are derived. An accurate approximation of the exact analytical solution of the vertical electric field is also proposed and demonstrated by device simulation. The optimization method and its numerical calculation results of the specific on-resistance of the SemiSJ trench MOSFETs with constant aspect ratio (AR) are presented and verified by simulations. The calculation results show that the optimized specific on-resistance of SemiSJ trench MOSFETs can be reduced by more than 12% with AR equaling three, as compared with that of superjunction trench MOSFETs. The effect of charge imbalance on the breakdown voltage (BV) is also investigated. It is found that the maximum BV is achieved at high-Qp condition rather than at charge-balance condition.
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DOI：
10.1109/ispsd.1999.764028
发表时间：
1999-05
期刊：
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
影响因子：
--
作者：
L. Lorenz;G. Deboy;A. Knapp;Martin Marz
通讯作者：
L. Lorenz;G. Deboy;A. Knapp;Martin Marz
影响因子：
3.1
作者：
W. Saito;I. Omura;S. Aida;S. Koduki;M. Izumisawa;T. Ogura
通讯作者：
W. Saito;I. Omura;S. Aida;S. Koduki;M. Izumisawa;T. Ogura
影响因子：
3.1
作者：
A. Strollo;E. Napoli
通讯作者：
A. Strollo;E. Napoli
DOI：
10.1109/ispsd.2011.5890852
发表时间：
2011-05
期刊：
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs
影响因子：
--
作者：
T. Tamaki;Y. Nakazawa;H. Kanai;Y. Abiko;Y. Ikegami;M. Ishikawa;E. Wakimoto;T. Yasuda;S. Eguchi
通讯作者：
T. Tamaki;Y. Nakazawa;H. Kanai;Y. Abiko;Y. Ikegami;M. Ishikawa;E. Wakimoto;T. Yasuda;S. Eguchi
影响因子：
3.1
作者：
Wang, Han;Napoli, Ettore;Udrea, Florin
通讯作者：
Udrea, Florin