Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.
Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.
复制标题
T 形栅极双源隧道场效应晶体管的模拟/射频性能
DOI：
10.1186/s11671-018-2723-y
复制
发表时间：
2018-10-12
影响因子：
--
通讯作者：
Zhao L
中科院分区：
文献类型：
--
作者：
Chen S;Liu H;Wang S;Li W;Wang X;Zhao L
本文提出了一种硅基T型栅双源隧道场效应晶体管（TGTFET），并对其进行了TCAD模拟研究。作为对比研究，讨论了TGTFET、LTFET和UTFET的结构、特性和模拟/RF性能。T型栅引入的栅重叠可以提高隧道结的效率。TGTFET中的双源极区可以通过提供双倍的隧道结面积来增加通态电流（ION）。为了进一步提高器件性能，在TGTFET中引入了n+口袋，进一步提高了带间隧穿率。模拟结果表明，在1V栅源电压（Vg）下，TGTFET的导通和开关比（ION/IOFF）分别达到81 μA/μm和6.7 × 10 ~（10）。TGTFET的平均亚阈值摆幅（SSavg，0 ~ 0.5VVg）达到51.5mV/dec，最小亚阈值摆幅（SSmin，0.1VVg）达到24.4mV/dec。研究了掺杂浓度、几何尺寸和外加电压对器件性能的影响，为TGTFET的设计提供了依据。在0.5V漏源电压（Vd）下，TGTFET的漏电流（gm）、输出电导（gds）、栅源电容（Cgs）、栅漏电容（Cgd）、截止频率（fT）和增益带宽（GBW）分别达到232 μS/μ m、214 μS/μm、0.7fF/μm、3.7fF/μm、11.9GHz和2.3GHz。由于结构上的优势，TGTFET获得了比UTFET和LTFET更好的DC/AC特性。总之，相当好的性能使TGTFET成为下一代低功耗和模拟/RF应用的非常有吸引力的选择。
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET are discussed. The gate overlap introduced by T-shape gate can enhance the efficiency of tunneling junction. The dual-source regions in TGTFET can increase the on-state current (ION) by offering a doubled tunneling junction area. In order to further improve the device performance, the n+ pocket is introduced in TGTFET to further increase the band-to-band tunneling rate. Simulation results reveal that the TGTFET’sIONand switching ratio (ION/IOFF) reach 81 μA/μm and 6.7 × 1010at 1 V gate to source voltage (Vg). The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 VVg) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 VVg) reaches 24.4 mV/dec. Moreover, it is found that TGTFET have strong robustness on drain-induced barrier lowering (DIBL) effect. The effects of doping concentration, geometric dimension, and applied voltage on device performance are investigated in order to create the TGTFET design guideline. Furthermore, the transconductance (gm), output conductance (gds), gate to source capacitance (Cgs), gate to drain capacitance (Cgd), cut-off frequency (fT), and gain bandwidth (GBW) of TGTFET reach 232 μS/μm, 214 μS/μm, 0.7 fF/μm, 3.7 fF/μm, 11.9 GHz, and 2.3 GHz at 0.5 V drain to source voltage (Vd), respectively. Benefiting from the structural advantage, TGTFET obtains better DC/AC characteristics compared to UTFET and LTFET. In conclusion, the considerable good performance makes TGTFET turn into a very attractive choice for the next generation of low-power and analog/RF applications.
登录
查看更多内容
影响因子：
4.9
作者：
Bangsaruntip, Sarunya;Cohen, Guy M.;Sleight, Jeffrey W.
通讯作者：
Sleight, Jeffrey W.
影响因子：
3.1
作者：
Hiblot, Gaspard;Dutta, Tapas;Ghibaudo, Gerard
通讯作者：
Ghibaudo, Gerard
影响因子：
4.9
作者：
Morita, Yukinori;Mori, Takahiro;Ota, Hiroyuki
通讯作者：
Ota, Hiroyuki
影响因子：
3.1
作者：
Villalon, Anthony;Le Carval, Gilles;Cristoloveanu, Sorin
通讯作者：
Cristoloveanu, Sorin
具有对称结构的两个隧道 FET 的模拟/射频性能
影响因子：
3.1
作者：
Chen, Shupeng;Liu, Hongxia;Wang, Qianqiong
通讯作者：
Wang, Qianqiong