Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.
Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.
复制标题
退火温度对共溅射InSnZnO薄膜晶体管性能的影响
DOI：
10.1039/c8ra06692b
复制
发表时间：
2018-10-10
期刊：
影响因子：
3.9
通讯作者：
Chen, Rongsheng
中科院分区：
文献类型：
--
作者：
Zhong, Wei;Li, Guoyuan;Lan, Linfeng;Li, Bin;Chen, Rongsheng
本文提出了一种用ZnO靶和ITO靶共溅射的方法生长铟锡锌氧化物（ITZO）作为底栅薄膜晶体管（TFT）的沟道层。分析了不同退火温度下ITZO薄膜的微观结构和光学性能。系统地研究了不同退火温度对ITZO TFT性能特性的影响。结果发现，退火温度为300 °C的ITZO TFT具有优异的电学性能，饱和场效应迁移率（μsat）为27.4 cm 2 V−1 s−1，阈值电压（Vth）为−0.64 V，亚阈值摆幅（SS）为0.23 V/decade，开关电流比（Ion/Ioff）为1.8 × 107。此外，它还显示出良好的输出曲线，包括栅极控制能力和良好的电极接触以及极端的大气稳定性。如所示的光致发光（PL）分析和X射线光电子能谱（XPS）分析，各种退火温度对器件性能的有益影响归因于重组的非晶网络和控制的缺陷化学膜。研究了沉积后热处理与晶体管特性之间的相关性，并证明了晶体管的优异性能。
Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work. The microstructure and optical properties of ITZO thin films at different annealing temperatures were analyzed. The impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated as well. It was found that ITZO TFT with annealing temperature of 300 °C exhibits excellent electrical performance with a high saturation field-effect mobility (μsat) of 27.4 cm2 V−1 s−1, a low threshold voltage (Vth) of −0.64 V, a small subthreshold swing (SS) value of 0.23 V per decade, and the high on-off current ratio (Ion/Ioff) of 1.8 × 107. In addition, it also shows good output curves including gate control capabilities and good electrode contact as well as extreme atmospheric stability. As shown by photoluminescence (PL) analysis and X-ray photoelectron spectroscopy (XPS) analysis, the beneficial effects of various annealing temperatures on device performance are attributed to the reorganization of the amorphous network and the control of defect chemistry in the films. The correlation between the post-deposition thermal treatment and the characteristics of a transistor was investigated and excellent performance of the transistor was demonstrated.
登录
查看更多内容
影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H
DOI：
10.1002/pssa.201431107
发表时间：
2014-11-01
影响因子：
2
作者：
Chauhan, Ram Narayan;Anand, R. S.;Kumar, Jitendra
通讯作者：
Kumar, Jitendra
N掺杂ZnSnO薄膜晶体管的制备及电性能
影响因子：
6.2
作者：
Dai, Shiqian;Wang, Tao;Wang, Yongsheng
通讯作者：
Wang, Yongsheng
DOI：
10.1007/s00339-007-4275-3
发表时间：
2008-02-01
影响因子：
2.7
作者：
Hsieh, P. -T.;Chen, Y. -C.;Wang, C. -M.
通讯作者：
Wang, C. -M.
影响因子：
4.9
作者：
Liu, Po-Tsun;Chou, Yi-Teh;Shieh, Han-Ping D.
通讯作者：
Shieh, Han-Ping D.