Poly (ethylene imine)-modulated transport behaviors of graphene field effect transistors with double Dirac points
Poly (ethylene imine)-modulated transport behaviors of graphene field effect transistors with double Dirac points
复制标题
具有双狄拉克点的石墨烯场效应晶体管的聚（乙烯亚胺）调制输运行为
DOI：
10.1063/1.4979687
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发表时间：
2017-04
影响因子：
3.2
通讯作者：
Hongwei Zhu
中科院分区：
文献类型：
--
作者：
Yilin Sun;Dan Xie;Cheng Zhang;Xinming Li;Jianlong Xu;Mengxing Sun;Changjiu Teng;Xian Li;Hongwei Zhu
制备了以 HfO2 作为介电层的底栅石墨烯场效应晶体管（GFET），并获得了定义为右电导最小值（VDirac+）和左电导最小值（VDirac-）的双狄拉克点的输运行为，表现出独特的 W 形变换特性，而不是典型的 V 形。这一观察结果表明，沟道区域中的石墨烯表现出与金属接触区域下方的石墨烯不同的掺杂行为。 GFET 的 W 形特性受到周围环境的影响，并且还发现了双狄拉克点的时间依赖性。经过聚乙烯亚胺（PEI）处理后，GFET的输运行为可以被调节，特别是VDirac+表现出更明显的负移，表明PEI对沟道区石墨烯具有显着的n掺杂效应。 PEI还能屏蔽环境影响，在一定程度上可以保护石墨烯不被p掺杂。同时...
The bottom-gated graphene field-effect transistors (GFETs) with HfO2 as the dielectric layer are fabricated and the transport behaviors with double Dirac points defined as the right conductance minima (VDirac+) and the left one (VDirac-) are obtained, which exhibit the unique W-shaped transform characteristics rather than the typical V-shape. This observation indicates that the graphene in the channel region shows the different doping behaviors from that underlying the metal contact region. The W-shaped characteristics of GFETs are affected by the ambient environment and the time-dependence of double Dirac points has been also found. After being treated by Poly (ethylene imine) (PEI), the transport behaviors of GFETs could be modulated, especially for VDirac+ showing more obvious negative shift, indicating that PEI has a remarkable n-doping effect on the graphene in the channel region. PEI also screens the environmental influence and could protect the graphene from being p-doped to some extent. At the sam...
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