Total Ionizing Dose Effects of SiGe HBTs Induced by 60Co Gamma-Ray Irradiation
Total Ionizing Dose Effects of SiGe HBTs Induced by 60Co Gamma-Ray Irradiation
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60Co 伽马射线辐照引起的 SiGe HBT 总电离剂量效应
DOI:
10.1080/00295639.2018.1450004
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发表时间:
2018-05
影响因子:
1.2
通讯作者:
Wei Chen
中科院分区:
文献类型:
--
作者:
Shuhuan Liu;Aqil Hussain;Da Li;Xiaoqiang Guo;Zhuoqi Li;Olarewaju Mubashiru Lawal;Jiangkun Yang;Wei Chen
Abstract For evaluating the SiGe heterojunction bipolar transistors (HBTs) performance during and after gamma-ray irradiation, the characteristics of the direct current (dc) gain of the test samples changed with increasing irradiation dose, and collector
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影响因子:
1
作者:
Yabin Sun;Jun Fu;Jun Xu;Yudong Wang;Ji Yang;Wei Zhou;Wei Zhang-;Jie Cui;Gaoqing Li;Zhihong Liu;Sumin Wei;Feng Wang;F. Guan;Pengzhan Li;Tianjue Zhang
通讯作者:
Yabin Sun;Jun Fu;Jun Xu;Yudong Wang;Ji Yang;Wei Zhou;Wei Zhang-;Jie Cui;Gaoqing Li;Zhihong Liu;Sumin Wei;Feng Wang;F. Guan;Pengzhan Li;Tianjue Zhang
影响因子:
1.7
作者:
K. C. Praveen;N. Pushpa;Y. Rao;G. Govindaraj;J. Cressler;A. Prakash
通讯作者:
K. C. Praveen;N. Pushpa;Y. Rao;G. Govindaraj;J. Cressler;A. Prakash
DOI:
10.1016/j.nima.2007.05.328
发表时间:
2007-09
影响因子:
1.4
作者:
J. Metcalfe;D. Dorfan;A. Grillo;A. Jones;F. Martinez-McKinney;P. Mekhedjian;M. Mendoza;H. Sadrozinski;G. Saffier-Ewing;A. Seiden;E. Spencer;M. Wilder;R. Hackenburg;J. Kierstead;S. Rescia;J. Cressler;G. Prakash;A. Sutton
通讯作者:
J. Metcalfe;D. Dorfan;A. Grillo;A. Jones;F. Martinez-McKinney;P. Mekhedjian;M. Mendoza;H. Sadrozinski;G. Saffier-Ewing;A. Seiden;E. Spencer;M. Wilder;R. Hackenburg;J. Kierstead;S. Rescia;J. Cressler;G. Prakash;A. Sutton
DOI:
10.1142/5607
发表时间:
2004-07
期刊:
--
影响因子:
--
作者:
peixiong zhao;D. Fleetwood
通讯作者:
peixiong zhao;D. Fleetwood
影响因子:
1.8
作者:
P. Cheng;J. Pellish;M. Carts;S. Phillips;E. Wilcox;T. Thrivikraman;L. Najafizadeh;J. Cressler;P. Marshall
通讯作者:
P. Cheng;J. Pellish;M. Carts;S. Phillips;E. Wilcox;T. Thrivikraman;L. Najafizadeh;J. Cressler;P. Marshall