Lattice Defects and Exfoliation Efficiency of 6H-SiC via H(2)(+) Implantation at Elevated Temperature.
Lattice Defects and Exfoliation Efficiency of 6H-SiC via H(2)(+) Implantation at Elevated Temperature.
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DOI：
10.3390/ma13245723
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发表时间：
2020-12-15
期刊：
影响因子：
--
通讯作者：
Li J
中科院分区：
文献类型：
--
作者：
Wang T;Yang Z;Li B;Xu S;Liao Q;Ge F;Zhang T;Li J
碳化硅（SiC）是半导体工业和核电站中使用的重要材料。用H离子注入的SiC晶片可以在退火后在损伤层内部裂开，以便于将薄SiC切片转移到处理晶片。这个过程被称为“离子切割”或“智能切割”。注氢SiC退火前后的剥离效率和残余晶格缺陷的变化值得研究。本文采用拉曼光谱和透射电子显微镜相结合的方法研究了注量为5 × 1016 H2+/cm ~ 2的H2+注入6 H-SiC在450和900 °C下的晶格损伤。通过拉曼光谱和透射电子显微镜观察了注入样品中动态退火引起的不同程度的损伤。采用原子力显微镜和扫描白光干涉仪对样品表面形貌进行了观察。在450 °C下注入然后在1100 °C下退火15分钟的样品中观察到表面起泡和剥落，而在900 °C下注入而没有进一步热处理的样品中发生表面起泡和剥落。这一发现可归因于高温植入过程中血小板内压的增加。研究了剥离效率、剥离位置和剥离后的粗糙度，并讨论了可能的原因。为进一步认识和完善高效离子切割技术提供了依据。
Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.
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影响因子：
3.1
作者：
Chen, J;Jung, P;Klein, H
通讯作者：
Klein, H
影响因子：
4
作者：
Dadwal, U.;Singh, R.
通讯作者：
Singh, R.
影响因子：
6.2
作者：
Dadwal, U.;Kumar, P.;Singh, R.
通讯作者：
Singh, R.
影响因子：
3.2
作者：
Höchbauer, T;Misra, A;Mayer, JW
通讯作者：
Mayer, JW
影响因子：
3.7
作者：
Ishimaru, M;Bae, IT;Sickafus, KE
通讯作者：
Sickafus, KE