High Reflectance Nanoscale V/Sc Multilayer for Soft X-ray Water Window Region.
High Reflectance Nanoscale V/Sc Multilayer for Soft X-ray Water Window Region.
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用于软X射线水窗区域的高反射率纳米级V/Sc多层膜
DOI：
10.1038/s41598-017-13222-5
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发表时间：
2017-10-10
影响因子：
4.6
通讯作者：
Wang Z
中科院分区：
文献类型：
--
作者：
Huang Q;Yi Q;Cao Z;Qi R;Loch RA;Jonnard P;Wu M;Giglia A;Li W;Louis E;Bijkerk F;Zhang Z;Wang Z
首次用V/Sc多层膜作为软X射线水窗区的高反射镜进行了实验验证。在近正向入射下，它主要出现在SC-L边(λ = 3.11 nm)以上，而在掠入射下，第二个峰出现在V-L边(λ = 2.42 nm)以上。D间距为1.59 nm和30个双层的V/Sc多层膜的界面宽度(σ = 分别为0.27和0.32 nm)小于传统的Cr/Sc多层膜(σ = 分别为0.28和0.47 nm)。对于具有30个双层的V/Sc多层膜，B4C阻挡层的引入对界面结构的改善不大。随着双层数增加到400，V/Sc层的生长形态和微观结构发生变化，结晶度略有增加。尽管如此，表面粗糙度仍为0.25 nm。采用400层V/Sc多层膜，在λ = 3.129 nm处测得最大软X射线反射率为18.4%。根据拟合的模型，在40°入射下，在λ = 2.425 nm处，S偏振反射率也可以达到5.2%。在实验结果的基础上，可以通过采用更稳定的沉积系统、探索不同的界面工程方法等方法来进一步提高反射率。
V/Sc multilayer is experimentally demonstrated for the first time as a high reflectance mirror for the soft X-ray water window region. It primarily works at above the Sc-L edge (λ = 3.11 nm) under near normal incidence while a second peak appears at above the V-L edge (λ = 2.42 nm) under grazing incidence. The V/Sc multilayer fabricated with a d-spacing of 1.59 nm and 30 bilayers has a smaller interface width (σ = 0.27 and 0.32 nm) than the conventional used Cr/Sc (σ = 0.28 and 0.47 nm). For V/Sc multilayer with 30 bilayers, the introduction of B4C barrier layers has little improvement on the interface structure. As the number of bilayers increasing to 400, the growth morphology and microstructure of the V/Sc layers evolves with slightly increased crystallization. Nevertheless, the surface roughness remains to be 0.25 nm. A maximum soft X-ray reflectance of 18.4% is measured at λ = 3.129 nm at 9° off-normal incidence using the 400-bilayers V/Sc multilayer. According to the fitted model, an s-polarization reflectance of 5.2% can also be expected at λ = 2.425 nm under 40° incidence. Based on the promising experimental results, further improvement of the reflectance can be achieved by using a more stable deposition system, exploring different interface engineering methods and so on.
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影响因子：
4.6
作者：
Jones MW;Elgass KD;Junker MD;de Jonge MD;van Riessen GA
通讯作者：
van Riessen GA
影响因子：
2.5
作者：
Rose, Max;Skopintsev, Petr;Vartanyants, Ivan
通讯作者：
Vartanyants, Ivan
DOI：
10.1143/jjap.39.1926
发表时间：
2000-04-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
影响因子：
--
作者：
Toyoda, M;Shitani, Y;Watanabe, M
通讯作者：
Watanabe, M
影响因子：
3.6
作者：
Eriksson, F;Johansson, GA;Birch, J
通讯作者：
Birch, J
影响因子：
4
作者：
Ghafoor, Naureen;Eriksson, Fredrik;Birch, Jens
通讯作者：
Birch, Jens