Three-dimensional placement rules of Cu6Sn5 textures formed on the (111)Cu and (001)Cu surfaces using electron backscattered diffraction
Three-dimensional placement rules of Cu6Sn5 textures formed on the (111)Cu and (001)Cu surfaces using electron backscattered diffraction
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使用电子背散射衍射在 (111)Cu 和 (001)Cu 表面上形成的 Cu6Sn5 织构的三维排列规则
DOI:
10.1016/j.matdes.2016.01.037
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发表时间:
2016-03
影响因子:
8.4
通讯作者:
Shihua Yang
中科院分区:
文献类型:
--
作者:
Mingyu Li;Yuxi Yu;Haifeng Yang;Shihua Yang
In this work, the grain orientations and surface characteristics of Cu6Sn5 textures formed at the liquid-Sn0.7Cu |(111)Cuand liquid-Sn0.7Cu |(001)Cujoint interfaces were systematically investigated using the electron backscattered diffraction technique. The results showed that there were two dominant reasons for formation of the strong Cu6Sn5 textures on the (111)Cuand (001)Cusurfaces: (1) the low but not minimum lattice matches of Cu atoms between Cu6Sn5 and Cu phases in the in-plane orthogonal directions and (2) the axial growth behaviour of Cu6Sn5 phase. Based on these reasons, we proposed and verified two types of the three-dimensional placement rules of Cu6Sn5 textures to reveal the nucleation behaviour of Cu6Sn5 on Cu surfaces. In addition, the macroscopic shear strengths of Cu6Sn5 textures on the actual joint interfaces were also tested. Our study may help clarify the epitaxial growth mechanism of Cu6Sn5 phase on the (111)Cuand (001)Cu surfaces and provide a strong scientific basis of Cu6Sn5 orientation design for three-dimensional integrated circuit interconnect applications.
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