Machine learning based test pattern analysis for localizing critical power activity areas
Machine learning based test pattern analysis for localizing critical power activity areas
复制标题
基于机器学习的测试模式分析,用于本地化关键电力活动区域
DOI:
10.1109/dft.2017.8244464
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发表时间:
2017
期刊:
影响因子:
--
通讯作者:
R. Drechsler
中科院分区:
文献类型:
--
作者:
H. Dhotre;S. Eggersglüß;M. Dehbashi;U. Pfannkuchen;R. Drechsler
The identification of power-risky test patterns is a crucial task in the design phase of digital circuits. Excessive test power could lead to test failures due to IR-drop, noise, etc. This has to be avoided to prevent yield loss and chip damages. However, the accurate power simulation of all test patterns to identify power-risky patterns as well as to find critical areas within each pattern is not possible due to run time and resource constraints. An important task is therefore the selection of a subset of potentially power-risky patterns, which will be simulated in an accurate manner. In this paper, we propose an independent test pattern analysis methodology for the integration into an existing industrial design flow. The proposed test pattern analysis technique is a lightweight method based on the cell's Transient Power Activity (TPA) to identify potentially power-risky patterns. The method uses layout and power information to identify critical power activity areas using machine learning techniques. Experiments were performed on opensource benchmarks as well as on an industrial design. The results were correlated with commercial power and IR-drop simulation tools. The proposed methodology was found to be effective in terms of speed and localization of the critical areas for unsafe patterns.
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DOI:
--
发表时间:
2012
期刊:
Journal of electronic testing
影响因子:
--
作者:
Junxia Ma;M. Tehranipoor;P. Girard
通讯作者:
P. Girard
DOI:
--
发表时间:
2012
期刊:
2012 IEEE 21st Asian Test Symposium
影响因子:
--
作者:
H. Bidgoli;Majid Namaki;Z. Navabi
通讯作者:
Z. Navabi
影响因子:
--
作者:
Jeremy Lee;M. Tehranipoor
通讯作者:
M. Tehranipoor
DOI:
--
发表时间:
2013
期刊:
Asian Test Symposium
影响因子:
--
作者:
Fang Bao;M. Tehranipoor;Harry H. Chen
通讯作者:
Harry H. Chen
DOI:
--
发表时间:
1999
期刊:
Proceedings (IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems)
影响因子:
--
作者:
Xiaodong Zhang;K. Roy
通讯作者:
K. Roy