Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM
Dependency of well-contact density on MCUs in 65-nm bulk CMOS SRAM
复制标题
65 nm 体 CMOS SRAM 中阱接触密度对 MCU 的依赖性
DOI：
10.1007/s11432-017-9549-8
复制
发表时间：
2018-10
期刊：
影响因子：
--
通讯作者：
Jizuo ZHANG
中科院分区：
文献类型：
--
作者：
Cheng XIE;Yueyue CHEN;Jianjun CHEN;Jizuo ZHANG
在定制的静态随机存取存储器（SRAM）单元中，辐射引起的单比特翻转（SBU）被认为是软错误的主要原因[1]。先进的技术和特征尺寸的缩小使得单事件多单元翻转（MCU）成为SRAM软错误的重要来源[2]。此外，在某些单粒子撞击条件下，外围电路的单粒子瞬态（SET）和电路中出现的单粒子闭锁（SEL）也会影响MCU [3]。MCU的单粒子效应导致SRAM逻辑混乱，从而导致永久性失效，已被广泛报道。因此，研究加固技术以减轻SRAM上的MCU是重要的。辐射引起的双极效应主要引起MCU [4]，而MCU率取决于良好的接触密度。阱接触结构因其能保持阱势稳定和避免阱势崩塌而被广泛应用于SRAM中。因此，高密度的阱接触可以大大降低SRAM中MCU的发生。两个硬化SRAM芯片设计与高密度阱接触，在65 nm的体CMOS工艺制造。比较和讨论了一种普通商用SRAM和两种加固SRAM的MCU特性。此外，两个硬化的MCU表征
Dear editor, In custom static random access memory (SRAM) cell, radiation-induced single bit upsets (SBUs) are considered as the main cause of soft error [1]. Advanced technologies and scaling down of feature sizes have made single-event multiple cell upsets (MCUs) as the vital source of soft error for SRAM [2]. Moreover, under certain single particle hitting conditions, single event transient (SET) at periphery circuit and single event latchup (SEL) appearing in the circuit, can affect MCU as well [3]. MCU induced by single event effect, which may cause SRAM logical confusion and subsequently permanent failure, has been widely reported. Therefore, it is important to study the hardening technique to mitigate MCU on SRAM radiation-induced bipolar effects dominantly induce MCU [4], and MCU rate depends on wellcontact density. Well-contact structure is widely used in SRAM owing to its capability to keep the well potential stable and avoid well potential collapse. Thus, high density of well-contacts can greatly decrease MCU occurrence in SRAM.In this study, the impact of well-contact density on SRAM is analyzed using heavy-ion radiation experiment. Two hardened SRAM chips designed with high density well-contacts are fabricated in a 65-nm bulk CMOS technology. MCU characterizations of a common commercial and two hardened SRAM are compared and discussed. In addition, the MCU characterizations of the two hardened
登录
查看更多内容
DOI：
10.1109/cicc.2006.321010
发表时间：
2006-09
期刊：
IEEE Custom Integrated Circuits Conference 2006
影响因子：
--
作者：
E. Ibe;S. Chung;S. Wen;H. Yamaguchi;Y. Yahagi;H. Kameyama;Shigehisa Yamamoto;T. Akioka
通讯作者：
E. Ibe;S. Chung;S. Wen;H. Yamaguchi;Y. Yahagi;H. Kameyama;Shigehisa Yamamoto;T. Akioka
影响因子：
1.8
作者：
I. Chatterjee;B. Narasimham;N. Mahatme;B. Bhuva;R. Reed;peixiong zhao;J. K. Wang;N. Vedula;B. Bartz;C. Monzel
通讯作者：
I. Chatterjee;B. Narasimham;N. Mahatme;B. Bhuva;R. Reed;peixiong zhao;J. K. Wang;N. Vedula;B. Bartz;C. Monzel
影响因子：
1.8
作者：
S. Jeon;Soonyoung Lee;S. Baeg;Ilgon Kim;Gunrae Kim
通讯作者：
S. Jeon;Soonyoung Lee;S. Baeg;Ilgon Kim;Gunrae Kim
影响因子：
1.8
作者：
Jiexin Luo;Jing Chen;Z. Chai;K. Lu;Weiwei He;Yan Yang;E. Zhang;D. Fleetwood;Xi Wang
通讯作者：
Jiexin Luo;Jing Chen;Z. Chai;K. Lu;Weiwei He;Yan Yang;E. Zhang;D. Fleetwood;Xi Wang
DOI：
10.1007/s11431-015-5999-5
发表时间：
2016-03
期刊：
Science China Technological Sciences
影响因子：
--
作者：
Jianjun Chen;Bin Liang;Yaqing Chi
通讯作者：
Jianjun Chen;Bin Liang;Yaqing Chi